FQA19N60

Quantity	excl. VAT	VAT incl.
1 - 1	7.24$	7.24$
2 - 2	6.88$	6.88$
3 - 4	6.51$	6.51$
5 - 9	6.15$	6.15$
10 - 19	6.01$	6.01$
20 - 29	5.86$	5.86$
30+	5.65$	5.65$

Quantity	U.P
1 - 1	7.24$	7.24$
2 - 2	6.88$	6.88$
3 - 4	6.51$	6.51$
5 - 9	6.15$	6.15$
10 - 19	6.01$	6.01$
20 - 29	5.86$	5.86$
30+	5.65$	5.65$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

FQA19N60. C(in): 2800pF. Cost): 350pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 74A. ID (T=100°C): 11.7A. ID (T=25°C): 18.5A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 65 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Quantity in stock updated on 11/01/2025, 20:25.

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Delivery in 2-3 days, with postal tracking!