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Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...636465 6667...128
Quantity in stock : 2192
FDS8884

FDS8884

C(in): 475pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id...
FDS8884
C(in): 475pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 19m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
FDS8884
C(in): 475pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 30A. ID (T=25°C): 8.5A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 19m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 5 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$
Quantity in stock : 819
FDS8958A

FDS8958A

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/inst...
FDS8958A
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.052 Ohms (Q2)
FDS8958A
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.052 Ohms (Q2)
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$
Quantity in stock : 2503
FDS8958B

FDS8958B

C(in): 760pF. Cost): 155pF. Channel type: N-P. IDss (min): 1uA. Number of terminals: 8. Pd (Power Di...
FDS8958B
C(in): 760pF. Cost): 155pF. Channel type: N-P. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.026 Ohms (Q1), 0.051 Ohms (Q2). Drain-source protection : yes. G-S Protection: no
FDS8958B
C(in): 760pF. Cost): 155pF. Channel type: N-P. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.026 Ohms (Q1), 0.051 Ohms (Q2). Drain-source protection : yes. G-S Protection: no
Set of 1
1.88$ VAT incl.
(1.88$ excl. VAT)
1.88$
Quantity in stock : 225
FDS8962C

FDS8962C

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/inst...
FDS8962C
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: dual MOSFET transistor. N and P channels. 'PowerTrench'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Q1 N-Ch 7A, 30V RDS(on)=0.030 Ohms, Vgs=10V. Spec info: Q2 P-Ch, 5A, 30V RDS(on)=0.052 Ohms, Vgs=10V
FDS8962C
Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: dual MOSFET transistor. N and P channels. 'PowerTrench'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Q1 N-Ch 7A, 30V RDS(on)=0.030 Ohms, Vgs=10V. Spec info: Q2 P-Ch, 5A, 30V RDS(on)=0.052 Ohms, Vgs=10V
Set of 1
1.88$ VAT incl.
(1.88$ excl. VAT)
1.88$
Quantity in stock : 62
FDS9435A

FDS9435A

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuratio...
FDS9435A
RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS9435A. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -5.6A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 528pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Housing (JEDEC standard): 1. Td(on): 7 ns. Technology: P-Channel PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V
FDS9435A
RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS9435A. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -5.6A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 528pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Housing (JEDEC standard): 1. Td(on): 7 ns. Technology: P-Channel PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V
Set of 1
1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$
Quantity in stock : 2378
FDS9926A

FDS9926A

Channel type: N. Trr Diode (Min.): 15 ns. ID (T=100°C): 5.4A. Number of terminals: 8. RoHS: yes. As...
FDS9926A
Channel type: N. Trr Diode (Min.): 15 ns. ID (T=100°C): 5.4A. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Rds-on 0.030 Ohms. Drain-source protection : yes. G-S Protection: no
FDS9926A
Channel type: N. Trr Diode (Min.): 15 ns. ID (T=100°C): 5.4A. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Rds-on 0.030 Ohms. Drain-source protection : yes. G-S Protection: no
Set of 1
1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$
Quantity in stock : 45
FDS9933A

FDS9933A

Channel type: P. Function: P-channel MOSFET transistor. Number of terminals: 8. RoHS: yes. Assembly/...
FDS9933A
Channel type: P. Function: P-channel MOSFET transistor. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.075 Ohms
FDS9933A
Channel type: P. Function: P-channel MOSFET transistor. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Spec info: 0.075 Ohms
Set of 1
1.64$ VAT incl.
(1.64$ excl. VAT)
1.64$
Quantity in stock : 34190
FDV301N

FDV301N

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configura...
FDV301N
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 301. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.22A. Drain current through resistor Rds [Ohm] @ Ids [A]: 4 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 301. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 8 ns. Ciss Gate Capacitance [pF]: 9.5pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FDV301N
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 301. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.22A. Drain current through resistor Rds [Ohm] @ Ids [A]: 4 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 301. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 8 ns. Ciss Gate Capacitance [pF]: 9.5pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.12$ VAT incl.
(0.12$ excl. VAT)
0.12$
Quantity in stock : 19801
FDV303N

FDV303N

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configura...
FDV303N
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 303. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.68A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.44 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 1V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FDV303N
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 303. Drain-source voltage Uds [V]: 25V. Drain Current Id [A] @ 25°C: 0.68A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.44 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 1V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 21101
FDV304P

FDV304P

C(in): 63pF. Cost): 34pF. Channel type: P. Trr Diode (Min.): surface-mounted component (SMD). Type o...
FDV304P
C(in): 63pF. Cost): 34pF. Channel type: P. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 1.5A. ID (T=100°C): 0.87 Ohms @ -0.5A. ID (T=25°C): 0.46A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 304. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 1.22 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.65V. Number of terminals: 3. Quantity per case: 1. Spec info: Operation gate voltage as low as 2.5V. Drain-source protection : yes. G-S Protection: no
FDV304P
C(in): 63pF. Cost): 34pF. Channel type: P. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: Low Input Charge. Id(imp): 1.5A. ID (T=100°C): 0.87 Ohms @ -0.5A. ID (T=25°C): 0.46A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 304. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 1.22 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.65V. Number of terminals: 3. Quantity per case: 1. Spec info: Operation gate voltage as low as 2.5V. Drain-source protection : yes. G-S Protection: no
Set of 5
0.51$ VAT incl.
(0.51$ excl. VAT)
0.51$
Quantity in stock : 16
FGA25N120ANTDTU

FGA25N120ANTDTU

Type of transistor: IGBT transistor. Collector-emitter voltage: 1200V. Collector current: 25A. Housi...
FGA25N120ANTDTU
Type of transistor: IGBT transistor. Collector-emitter voltage: 1200V. Collector current: 25A. Housing: TO-3P
FGA25N120ANTDTU
Type of transistor: IGBT transistor. Collector-emitter voltage: 1200V. Collector current: 25A. Housing: TO-3P
Set of 1
6.47$ VAT incl.
(6.47$ excl. VAT)
6.47$
Quantity in stock : 19
FGA40N65SMD-DIóDA

FGA40N65SMD-DIóDA

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: ...
FGA40N65SMD-DIóDA
RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGA40N65SMD. Collector-emitter voltage Uce [V]: 650V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 120ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 174W. Maximum collector current (A): 60.4k Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
FGA40N65SMD-DIóDA
RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGA40N65SMD. Collector-emitter voltage Uce [V]: 650V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 120ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 174W. Maximum collector current (A): 60.4k Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C
Set of 1
13.27$ VAT incl.
(13.27$ excl. VAT)
13.27$
Quantity in stock : 24
FGA60N65SMD

FGA60N65SMD

C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms....
FGA60N65SMD
C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 650V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no
FGA60N65SMD
C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 650V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no
Set of 1
10.32$ VAT incl.
(10.32$ excl. VAT)
10.32$
Quantity in stock : 39
FGB20N60SF

FGB20N60SF

C(in): 940pF. Cost): 110pF. Channel type: N. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 2...
FGB20N60SF
C(in): 940pF. Cost): 110pF. Channel type: N. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 20A. Marking on the case: FGB20N60SF. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 12 ns. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2-PAK. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 2. Function: solar inverter, UPS, welding machine, PFC. Note: N-channel MOS IGBT transistor. CE diode: no. Germanium diode: no
FGB20N60SF
C(in): 940pF. Cost): 110pF. Channel type: N. Collector current: 40A. Ic(pulse): 60A. Ic(T=100°C): 20A. Marking on the case: FGB20N60SF. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 90 ns. Td(on): 12 ns. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2-PAK. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 2. Function: solar inverter, UPS, welding machine, PFC. Note: N-channel MOS IGBT transistor. CE diode: no. Germanium diode: no
Set of 1
7.53$ VAT incl.
(7.53$ excl. VAT)
7.53$
Quantity in stock : 47
FGH40N60SFDTU

FGH40N60SFDTU

C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. F...
FGH40N60SFDTU
C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 40A. Marking on the case: FGH40N60SFD. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH40N60SFDTU
C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 40A. Marking on the case: FGH40N60SFD. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 115 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
8.53$ VAT incl.
(8.53$ excl. VAT)
8.53$
Quantity in stock : 16
FGH40N60SMDF

FGH40N60SMDF

C(in): 1880pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 70 ns. C...
FGH40N60SMDF
C(in): 1880pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 70 ns. Collector current: 80A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 40A. Pd (Power Dissipation, Max): 349W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 12 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Spec info: Ic 80A @ 25°C, 40A @ 110°C, Icm 120A (pulsed). CE diode: yes. Germanium diode: no
FGH40N60SMDF
C(in): 1880pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 70 ns. Collector current: 80A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 40A. Pd (Power Dissipation, Max): 349W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 12 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. Spec info: Ic 80A @ 25°C, 40A @ 110°C, Icm 120A (pulsed). CE diode: yes. Germanium diode: no
Set of 1
13.22$ VAT incl.
(13.22$ excl. VAT)
13.22$
Quantity in stock : 76
FGH40N60UFD

FGH40N60UFD

C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. F...
FGH40N60UFD
C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 40A. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 24 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH40N60UFD
C(in): 2110pF. Cost): 200pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 80A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 40A. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 112 ns. Td(on): 24 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
8.21$ VAT incl.
(8.21$ excl. VAT)
8.21$
Quantity in stock : 21
FGH60N60SFD

FGH60N60SFD

C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 47 ns. F...
FGH60N60SFD
C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 47 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: FGH60N60SFD. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH60N60SFD
C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 47 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: FGH60N60SFD. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
13.39$ VAT incl.
(13.39$ excl. VAT)
13.39$
Quantity in stock : 75
FGH60N60SFTU

FGH60N60SFTU

C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Function: Induction Heatin...
FGH60N60SFTU
C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: FGH60N60SF. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: no. Germanium diode: no
FGH60N60SFTU
C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: FGH60N60SF. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: no. Germanium diode: no
Set of 1
12.84$ VAT incl.
(12.84$ excl. VAT)
12.84$
Quantity in stock : 65
FGH60N60SMD

FGH60N60SMD

C(in): 2915pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 30 ns. F...
FGH60N60SMD
C(in): 2915pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 30 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: FGH60N60SMD. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 18 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
FGH60N60SMD
C(in): 2915pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 30 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: FGH60N60SMD. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 18 ns. Housing: TO-247. Housing (according to data sheet): TO-247AB. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no
Set of 1
10.50$ VAT incl.
(10.50$ excl. VAT)
10.50$
Quantity in stock : 142
FGL40N120ANDTU

FGL40N120ANDTU

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: ...
FGL40N120ANDTU
RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-264. Housing (JEDEC standard): plastic tube. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGL40N120AND. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 5.5V. Maximum dissipation Ptot [W]: 500W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 20 ns. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264-3L. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V...3.15V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 7.5V. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FGL40N120ANDTU
RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-264. Housing (JEDEC standard): plastic tube. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGL40N120AND. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 5.5V. Maximum dissipation Ptot [W]: 500W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 20 ns. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264-3L. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.9V...3.15V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 7.5V. Maximum collector current (A): 160A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
22.56$ VAT incl.
(22.56$ excl. VAT)
22.56$
Quantity in stock : 12
FJAF6810

FJAF6810

Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color ...
FJAF6810
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed . Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A)
FJAF6810
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 8. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed . Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
17.39$ VAT incl.
(17.39$ excl. VAT)
17.39$
Quantity in stock : 779
FJAF6810A

FJAF6810A

Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(p...
FJAF6810A
Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
FJAF6810A
Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$
Quantity in stock : 142
FJAF6810D

FJAF6810D

Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High V Color Displa...
FJAF6810D
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High V Color Display Hor Defl (with Damper Diode)'. Max hFE gain: 8. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810D. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6810. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes
FJAF6810D
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High V Color Display Hor Defl (with Damper Diode)'. Max hFE gain: 8. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 20A. Marking on the case: J6810D. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6810. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes
Set of 1
3.62$ VAT incl.
(3.62$ excl. VAT)
3.62$
Quantity in stock : 71
FJAF6812

FJAF6812

Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color ...
FJAF6812
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 12A. Ic(pulse): 24A. Marking on the case: J6812. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6812. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes
FJAF6812
Conditioning: plastic tube. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 12A. Ic(pulse): 24A. Marking on the case: J6812. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 750V. Vebo: 6V. Number of terminals: 3. Note: screen printed J6812. Quantity per case: 1. Conditioning unit: 30. Spec info: High Switching Speed--tF(typ.)=0.1uS. Housing: TO-3PF (SOT399, 2-16E3A). CE diode: yes
Set of 1
3.92$ VAT incl.
(3.92$ excl. VAT)
3.92$
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