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Electronic components and equipment, for businesses and individuals

Product categories :

Semiconductors Transistors

FJP13009H2

Quantity	excl. VAT	VAT incl.
1 - 4	2.91$	2.91$
5 - 9	2.77$	2.77$
10 - 24	2.62$	2.62$
25 - 47	2.47$	2.47$

Quantity	U.P
1 - 4	2.91$	2.91$
5 - 9	2.77$	2.77$
10 - 24	2.62$	2.62$
25 - 47	2.47$	2.47$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 47

Set of 1

FJP13009H2. Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Collector current: 12A. Ic(pulse): 24A. Marking on the case: J13009-2. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 02:25.

Technical documentation

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2.91$ VAT incl.
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2.91$