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Semiconductors Transistors

FQA24N50

FQA24N50
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 10.41$ 10.41$
2 - 2 9.89$ 9.89$
3 - 4 9.36$ 9.36$
5 - 9 8.84$ 8.84$
10 - 19 8.64$ 8.64$
20 - 29 8.43$ 8.43$
30 - 43 8.12$ 8.12$
Quantity U.P
1 - 1 10.41$ 10.41$
2 - 2 9.89$ 9.89$
3 - 4 9.36$ 9.36$
5 - 9 8.84$ 8.84$
10 - 19 8.64$ 8.64$
20 - 29 8.43$ 8.43$
30 - 43 8.12$ 8.12$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 43
Set of 1

FQA24N50. C(in): 3500pF. Cost): 520pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Id(imp): 96A. ID (T=100°C): 12.5A. ID (T=25°C): 24A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 290W. On-resistance Rds On: 0.156 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 80 ns. Technology: DMOS Technology. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Quantity in stock updated on 11/01/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 19
FQA24N60

FQA24N60

C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 470...
FQA24N60
C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Id(imp): 94A. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no
FQA24N60
C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Id(imp): 94A. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no
Set of 1
9.46$ VAT incl.
(9.46$ excl. VAT)
9.46$

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ESM106M050S1A5C110

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SPA04N60C3

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