FQA13N50CF

FQA13N50CF. C(in): 1580pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 9.5A. ID (T=25°C): 15A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 218W. On-resistance Rds On: 0.43 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 25 ns. Technology: DMOS Technology. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 43nC). G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.