Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.05$ | 2.05$ |
5 - 9 | 1.94$ | 1.94$ |
10 - 24 | 1.84$ | 1.84$ |
25 - 49 | 1.74$ | 1.74$ |
50 - 66 | 1.70$ | 1.70$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.05$ | 2.05$ |
5 - 9 | 1.94$ | 1.94$ |
10 - 24 | 1.84$ | 1.84$ |
25 - 49 | 1.74$ | 1.74$ |
50 - 66 | 1.70$ | 1.70$ |
FJP13007. Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 60. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Marking on the case: J13007. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 14:25.
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