Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.97$ | 1.97$ |
5 - 9 | 1.87$ | 1.87$ |
10 - 24 | 1.77$ | 1.77$ |
25 - 49 | 1.67$ | 1.67$ |
50 - 70 | 1.63$ | 1.63$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.97$ | 1.97$ |
5 - 9 | 1.87$ | 1.87$ |
10 - 24 | 1.77$ | 1.77$ |
25 - 49 | 1.67$ | 1.67$ |
50 - 70 | 1.63$ | 1.63$ |
FJP13007H2. Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 39. Minimum hFE gain: 26. Collector current: 8A. Ic(pulse): 16A. Marking on the case: J13007-2. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 05:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.