Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FDH45N50F. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 45A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.12 Ohms @ 22.5A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 215 ns. Ciss Gate Capacitance [pF]: 6630pF. Maximum dissipation Ptot [W]: 625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. ID (T=25°C): 7.5A. Idss (max): 7.5A. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: dual N-channel MOSFET transistor. 30V. 'PowerTrench MOSFET'. Housing: SMD. Housing (according to data sheet): Power-56-8. Voltage Vds(max): 30 v. Quantity per case: 2. Function: 7.5A, Rds-on 0.013 Ohms (Q1). Spec info: 7.5A, Rds-on 0.0215 Ohms (Q2)

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 306. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -2.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ -2.6A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 61 ns. Ciss Gate Capacitance [pF]: 1138pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 451pF. Cost): 75pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: Battery management. Id(imp): 5A. ID (T=25°C): 1.6A. Idss (max): 0.1uA. IDss (min): n/a. Note: screen printing/SMD code 338. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.088 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 16 ns. Td(on): 10 ns. Technology: Specified PowerTrench MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V

C(in): 182pF. Cost): 56pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: MOSFET. Function: Single P-Channel, Logic Level. Id(imp): 5A. ID (T=25°C): 1.5A. Idss: 10uA. IDss (min): 1uA. Marking on the case: 358. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.105 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 618. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.25A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.185 Ohms @ -1A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 6.5 ns. Switch-off delay tf[nsec.]: 16.5 ns. Ciss Gate Capacitance [pF]: 430pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 2200pF. Cost): 330pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 72A. ID (T=100°C): 10.8A. ID (T=25°C): 18A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. On-resistance Rds On: 0.22 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 55 ns. Technology: N-Channel MOSFET (UniFET). Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Faible charge de grille (45nC typique). Drain-source protection : yes. G-S Protection: no

Channel type: N. On-resistance Rds On: 0.016 Ohms. Type of transistor: MOSFET power transistor. Max drain current: 79A. Power: 310W. Housing: TO-220AB. Function: DC/DC voltage converter and UPS inverters. Id(imp): 80A. ID (T=100°C): 56A. ID (T=25°C): 79A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 16 ns. Technology: N-Channel PowerTrench® MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source voltage (Vds): 150V. G-S Protection: no

C(in): 6000pF. Cost): 820pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter and UPS inverters. Id(imp): 80A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.009 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 30 ns. Technology: N-Channel PowerTrench® MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 2880pF. Cost): 3990pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 62 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter and UPS inverters. Id(imp): 60.4k Ohms. ID (T=100°C): 43A. ID (T=25°C): 61A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 12 ns. Technology: N-Channel PowerTrench® MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no

C(in): 945pF. Cost): 155pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 46A. ID (T=100°C): 6.9A. ID (T=25°C): 11.5A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.46 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 20 ns. Technology: UniFET TM II MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Low gate charge (typical 23nC), Low Crss 14pF. G-S Protection: yes

C(in): 480pF. Cost): 66pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 20A. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 1.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 13 ns. Technology: UniFET MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Low gate charge (typical 11nC), Low Crss 5pF. G-S Protection: no

C(in): 720pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 20A. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.5W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: UniFET Ultra FRMOS MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Low gate charge (typical 12nC), Low Crss 9pF. G-S Protection: no

C(in): 1604pF. Cost): 408pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 50A. ID (T=25°C): 8.8A. Idss (max): 1uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 42 ns. Td(on): 13 ns. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) min.: 1V. Technology: P-channel. Drain-source protection : yes. G-S Protection: no

C(in): 2010pF. Cost): 590pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 36ns. Type of transistor: MOSFET. Id(imp): 50A. ID (T=25°C): 9A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 100 ns. Td(on): 12 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Technology: P-channel. Drain-source protection : yes. G-S Protection: no

C(in): 1385pF. Cost): 275pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: battery charge controller. Id(imp): 50A. ID (T=25°C): 8.8A. Idss (max): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 10 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Technology: P-channel. Spec info: HBM ESD protection level of 3.8kV. Drain-source protection : no. G-S Protection: yes

Channel type: N-P. Conditioning: roll. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: omplementary PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Rds-on 0.042 Ohms (Q1), 0.082 Ohms (Q2). Conditioning unit: 2500. Spec info: N-channel transistor (Q1), P-channel transistor (Q2)

Channel type: P. Function: Dual P-Channel MOSFET. PowerTrench. 30V. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 2. Technology: P-channel. Spec info: td(on) 13ns, td(off) 48ns

Channel type: P. Number of terminals: 8. Pd (Power Dissipation, Max): 1.6W. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Technology: P-channel. Spec info: td(on) 12ns, td(off) 68ns

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6670A. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 13A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 64 ns. Ciss Gate Capacitance [pF]: 2220pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.013 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2470pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1. Manufacturer's marking: Extended VGS range (-25V) for battery operated applications. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 3 ns. Technology: PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: FDS6675BZ

C(in): 2890pF. Cost): 500pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 65A. ID (T=100°C): n/a. ID (T=25°C): 13A. Idss (max): 1uA. IDss (min): n/a. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 7.7m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 210 ns. Td(on): 13 ns. Technology: PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: Zero Gate Voltage Drain Current. Drain-source protection : yes. G-S Protection: yes

C(in): 1205pF. Cost): 290pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Id(imp): 50A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 9.8m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 9 ns. Technology: PowerTrench MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Function: logic level control. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): 8.2A. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6900AS. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 8.2A/6.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.036 Ohms / 0.038 Ohms @ 8.2/6.9A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 570pF/600pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: FDS6912. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 6A/6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms/0.028 Ohms @ 6A/6A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 29 ns. Ciss Gate Capacitance [pF]: 740pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C