Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 9.58$ | 9.58$ |
2 - 2 | 9.10$ | 9.10$ |
3 - 4 | 8.91$ | 8.91$ |
5 - 9 | 8.62$ | 8.62$ |
10 - 19 | 8.43$ | 8.43$ |
20 - 29 | 8.14$ | 8.14$ |
30 - 32 | 7.86$ | 7.86$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 9.58$ | 9.58$ |
2 - 2 | 9.10$ | 9.10$ |
3 - 4 | 8.91$ | 8.91$ |
5 - 9 | 8.62$ | 8.62$ |
10 - 19 | 8.43$ | 8.43$ |
20 - 29 | 8.14$ | 8.14$ |
30 - 32 | 7.86$ | 7.86$ |
N-channel transistor, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V - FQA13N80-F109. N-channel transistor, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 8A. ID (T=25°C): 12.6A. Idss (max): 100uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2700pF. Cost): 275pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 850 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 50.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer Fairchild. Quantity in stock updated on 12/08/2025, 14:08.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.