FQA10N80C

FQA10N80C. C(in): 2150pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 730 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 6.32A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: FQA10N80C. Pd (Power Dissipation, Max): 240W. On-resistance Rds On: 0.93 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 50 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Quantity in stock updated on 08/01/2025, 18:25.