FJP13007H1

Quantity	excl. VAT	VAT incl.
1 - 4	2.06$	2.06$
5 - 9	1.96$	1.96$
10 - 24	1.86$	1.86$
25 - 49	1.75$	1.75$
50 - 99	1.71$	1.71$
100 - 143	1.54$	1.54$

Quantity	U.P
1 - 4	2.06$	2.06$
5 - 9	1.96$	1.96$
10 - 24	1.86$	1.86$
25 - 49	1.75$	1.75$
50 - 99	1.71$	1.71$
100 - 143	1.54$	1.54$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 143

Set of 1

FJP13007H1. Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Collector current: 8A. Ic(pulse): 16A. Marking on the case: J13007-1. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 20:25.

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Delivery in 2-3 days, with postal tracking!