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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 12A, TO-220, TO-220, 400V - FJP13009

NPN transistor, 12A, TO-220, TO-220, 400V - FJP13009
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.54$ 2.54$
5 - 9 2.41$ 2.41$
10 - 24 2.34$ 2.34$
25 - 49 2.29$ 2.29$
50 - 50 2.24$ 2.24$
Quantity U.P
1 - 4 2.54$ 2.54$
5 - 9 2.41$ 2.41$
10 - 24 2.34$ 2.34$
25 - 49 2.29$ 2.29$
50 - 50 2.24$ 2.24$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 50
Set of 1

NPN transistor, 12A, TO-220, TO-220, 400V - FJP13009. NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 17. Minimum hFE gain: 8. Ic(pulse): 24A. Marking on the case: J13009. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V. Quantity in stock updated on 21/05/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 49
FJP13009H2

FJP13009H2

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (accordi...
FJP13009H2
NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 24A. Marking on the case: J13009-2. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V
FJP13009H2
NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 28. Minimum hFE gain: 15. Ic(pulse): 24A. Marking on the case: J13009-2. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V
Set of 1
2.91$ VAT incl.
(2.91$ excl. VAT)
2.91$

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