Quantity | excl. VAT | VAT incl. |
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1 - 1 | 6.33$ | 6.33$ |
Quantity | U.P | |
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1 - 1 | 6.33$ | 6.33$ |
FJL4315-O. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 17A. Marking on the case: J4315O. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) FJL4215-O. Quantity in stock updated on 24/12/2024, 13:25.
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