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Semiconductors
Transistors

Transistors

3189 products available
Products per page :
123 45...128
Quantity in stock : 182
2N5116

2N5116

Quantity per case: 1. Function: P-FET S. ID (T=25°C): 6mA. Idss (max): 6mA. Assembly/installation: ...
2N5116
Quantity per case: 1. Function: P-FET S. ID (T=25°C): 6mA. Idss (max): 6mA. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18
2N5116
Quantity per case: 1. Function: P-FET S. ID (T=25°C): 6mA. Idss (max): 6mA. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18
Set of 1
2.31$ VAT incl.
(2.31$ excl. VAT)
2.31$
Quantity in stock : 256
2N5210

2N5210

Cost): 4pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 30 M...
2N5210
Cost): 4pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 600. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 4.5V. Function: HI-FI low noise pre-amplifier. BE diode: no. CE diode: no
2N5210
Cost): 4pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 600. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 4.5V. Function: HI-FI low noise pre-amplifier. BE diode: no. CE diode: no
Set of 1
0.36$ VAT incl.
(0.36$ excl. VAT)
0.36$
Quantity in stock : 6084
2N5401

2N5401

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
2N5401
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5401. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: 2N5401
2N5401
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5401. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: 2N5401
Set of 10
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 63
2N5415

2N5415

C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Max hFE...
2N5415
C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Max hFE gain: 150. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Temperature: +200°C. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 200V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 200V. Vebo: 4 v. BE diode: no. CE diode: no
2N5415
C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Max hFE gain: 150. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Temperature: +200°C. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 200V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 200V. Vebo: 4 v. BE diode: no. CE diode: no
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$
Quantity in stock : 14
2N5416

2N5416

C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Functio...
2N5416
C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching and Linear amplifier. Max hFE gain: 120. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. BE diode: no. CE diode: no
2N5416
C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching and Linear amplifier. Max hFE gain: 120. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. BE diode: no. CE diode: no
Set of 1
1.35$ VAT incl.
(1.35$ excl. VAT)
1.35$
Quantity in stock : 38
2N5458

2N5458

C(in): 4.5pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. Id...
2N5458
C(in): 4.5pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. Idss (max): 9mA. IDss (min): 2mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V. Drain-source protection : no. G-S Protection: no
2N5458
C(in): 4.5pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. Idss (max): 9mA. IDss (min): 2mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V. Drain-source protection : no. G-S Protection: no
Set of 1
2.16$ VAT incl.
(2.16$ excl. VAT)
2.16$
Quantity in stock : 2070
2N5459

2N5459

C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: F...
2N5459
C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: FET. Function: Uni sym. Idss (max): 16mA. IDss (min): 4mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 4mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 4.5V. Gate/source voltage (off) max.: 8V. Gate/source voltage (off) min.: 2V. Drain-source protection : no. G-S Protection: no
2N5459
C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: FET. Function: Uni sym. Idss (max): 16mA. IDss (min): 4mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 4mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 4.5V. Gate/source voltage (off) max.: 8V. Gate/source voltage (off) min.: 2V. Drain-source protection : no. G-S Protection: no
Set of 1
0.77$ VAT incl.
(0.77$ excl. VAT)
0.77$
Quantity in stock : 81
2N5484

2N5484

C(in): 5pF. Cost): 2pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Idss (max):...
2N5484
C(in): 5pF. Cost): 2pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Idss (max): 5mA. IDss (min): 1mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: J-FET. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. Vgs(th) min.: 3V. Function: VHF/UHF, RF Amplifier
2N5484
C(in): 5pF. Cost): 2pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Idss (max): 5mA. IDss (min): 1mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: J-FET. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 25V. Vgs(th) min.: 3V. Function: VHF/UHF, RF Amplifier
Set of 1
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$
Quantity in stock : 7694
2N5551

2N5551

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
2N5551
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. BE diode: no. CE diode: no
2N5551
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 796
2N5551BU

2N5551BU

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number ...
2N5551BU
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 5551. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor
2N5551BU
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 5551. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor
Set of 1
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$
Quantity in stock : 161
2N5884

2N5884

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gai...
2N5884
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 25A. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N5886
2N5884
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 25A. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N5886
Set of 1
6.24$ VAT incl.
(6.24$ excl. VAT)
6.24$
Quantity in stock : 168
2N5886

2N5886

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. M...
2N5886
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 25A. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N5884. BE diode: no. CE diode: no
2N5886
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 25A. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N5884. BE diode: no. CE diode: no
Set of 1
8.62$ VAT incl.
(8.62$ excl. VAT)
8.62$
Quantity in stock : 31
2N5886G

2N5886G

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration:...
2N5886G
RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5886G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 25mA. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor
2N5886G
RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5886G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 25mA. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor
Set of 1
18.05$ VAT incl.
(18.05$ excl. VAT)
18.05$
Out of stock
2N6027

2N6027

Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (P...
2N6027
Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -50...+100°C. Spec info: Programmable Unijunction Transistor
2N6027
Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -50...+100°C. Spec info: Programmable Unijunction Transistor
Set of 1
0.90$ VAT incl.
(0.90$ excl. VAT)
0.90$
Quantity in stock : 6430
2N6027G

2N6027G

RoHS: yes. Component family: Bipolar Transistor, Single Layer (PUT). Housing: PCB soldering. Housing...
2N6027G
RoHS: yes. Component family: Bipolar Transistor, Single Layer (PUT). Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6027G. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +100°C
2N6027G
RoHS: yes. Component family: Bipolar Transistor, Single Layer (PUT). Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6027G. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +100°C
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$
Quantity in stock : 320
2N6027G-TO92

2N6027G-TO92

Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (P...
2N6027G-TO92
Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -50...+100°C. Spec info: Programmable Unijunction Transistor
2N6027G-TO92
Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -50...+100°C. Spec info: Programmable Unijunction Transistor
Set of 1
0.86$ VAT incl.
(0.86$ excl. VAT)
0.86$
Quantity in stock : 155
2N6028

2N6028

Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (P...
2N6028
Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -50...+100°C. Spec info: Programmable Unijunction Transistor
2N6028
Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -50...+100°C. Spec info: Programmable Unijunction Transistor
Set of 1
0.59$ VAT incl.
(0.59$ excl. VAT)
0.59$
Quantity in stock : 580
2N6028G

2N6028G

RoHS: yes. Component family: Bipolar Transistor, Single Layer (PUT). Housing: PCB soldering. Housing...
2N6028G
RoHS: yes. Component family: Bipolar Transistor, Single Layer (PUT). Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6028G. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +100°C
2N6028G
RoHS: yes. Component family: Bipolar Transistor, Single Layer (PUT). Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6028G. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +100°C
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$
Out of stock
2N6059

2N6059

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain...
2N6059
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 750. Collector current: 12A. Note: b>750. Pd (Power Dissipation, Max): 150W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V
2N6059
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 750. Collector current: 12A. Note: b>750. Pd (Power Dissipation, Max): 150W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V
Set of 1
6.03$ VAT incl.
(6.03$ excl. VAT)
6.03$
Quantity in stock : 1
2N6080

2N6080

Quantity per case: 1. Semiconductor material: silicon. FT: 175 MHz. Function: VHF-O Tr. Collector cu...
2N6080
Quantity per case: 1. Semiconductor material: silicon. FT: 175 MHz. Function: VHF-O Tr. Collector current: 5A. Pd (Power Dissipation, Max): 12W. Housing (according to data sheet): M135. Type of transistor: NPN. Collector/emitter voltage Vceo: 36V. Spec info: SD1012. BE diode: no. CE diode: no
2N6080
Quantity per case: 1. Semiconductor material: silicon. FT: 175 MHz. Function: VHF-O Tr. Collector current: 5A. Pd (Power Dissipation, Max): 12W. Housing (according to data sheet): M135. Type of transistor: NPN. Collector/emitter voltage Vceo: 36V. Spec info: SD1012. BE diode: no. CE diode: no
Set of 1
17.95$ VAT incl.
(17.95$ excl. VAT)
17.95$
Quantity in stock : 18
2N6109

2N6109

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 7A. Note: hFE ...
2N6109
Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 7A. Note: hFE 20. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 60V. Spec info: TO-220AB
2N6109
Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 7A. Note: hFE 20. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 60V. Spec info: TO-220AB
Set of 1
2.04$ VAT incl.
(2.04$ excl. VAT)
2.04$
Quantity in stock : 27
2N6211

2N6211

Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 2A. Pd (Power ...
2N6211
Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 2A. Pd (Power Dissipation, Max): 35W. Type of transistor: PNP. Vcbo: 275V. Collector/emitter voltage Vceo: 225V
2N6211
Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 2A. Pd (Power Dissipation, Max): 35W. Type of transistor: PNP. Vcbo: 275V. Collector/emitter voltage Vceo: 225V
Set of 1
12.86$ VAT incl.
(12.86$ excl. VAT)
12.86$
Quantity in stock : 23
2N6284

2N6284

BE resistor: 8k Ohms (R1), 60 Ohms (R2). Cost): 400pF. Darlington transistor?: yes. Quantity per cas...
2N6284
BE resistor: 8k Ohms (R1), 60 Ohms (R2). Cost): 400pF. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: kHz. Function: hFE 750...180000. Max hFE gain: 18000. Minimum hFE gain: 750. Collector current: 20A. Ic(pulse): 40A. Number of terminals: 2. Pd (Power Dissipation, Max): 160W. RoHS: yes. Weight: 11.8g. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6287. BE diode: no. CE diode: yes
2N6284
BE resistor: 8k Ohms (R1), 60 Ohms (R2). Cost): 400pF. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: kHz. Function: hFE 750...180000. Max hFE gain: 18000. Minimum hFE gain: 750. Collector current: 20A. Ic(pulse): 40A. Number of terminals: 2. Pd (Power Dissipation, Max): 160W. RoHS: yes. Weight: 11.8g. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6287. BE diode: no. CE diode: yes
Set of 1
10.56$ VAT incl.
(10.56$ excl. VAT)
10.56$
Quantity in stock : 100
2N6287G

2N6287G

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-3....
2N6287G
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6287G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 20A. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C
2N6287G
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6287G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 20A. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C
Set of 1
29.91$ VAT incl.
(29.91$ excl. VAT)
29.91$
Quantity in stock : 4
2N6468

2N6468

Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gai...
2N6468
Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 15. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-66. Housing (according to data sheet): TO-66. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 130V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 120V. Vebo: 5V
2N6468
Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 15. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-66. Housing (according to data sheet): TO-66. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 130V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 120V. Vebo: 5V
Set of 1
19.14$ VAT incl.
(19.14$ excl. VAT)
19.14$
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