2N5415

Quantity	excl. VAT	VAT incl.
1 - 4	1.04$	1.04$
5 - 9	0.99$	0.99$
10 - 24	0.94$	0.94$
25 - 49	0.89$	0.89$
50 - 63	0.86$	0.86$

Quantity	U.P
1 - 4	1.04$	1.04$
5 - 9	0.99$	0.99$
10 - 24	0.94$	0.94$
25 - 49	0.89$	0.89$
50 - 63	0.86$	0.86$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 63

Set of 1

2N5415. C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Max hFE gain: 150. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Temperature: +200°C. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 200V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 200V. Vebo: 4 v. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!