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Semiconductors
Transistors

Transistors

3186 products available
Products per page :
1...345 67...128
Quantity in stock : 14
2SA1123

2SA1123

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE g...
2SA1123
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE gain: 130. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: A1123. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planer type'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V
2SA1123
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE gain: 130. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: A1123. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planer type'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V
Set of 1
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$
Quantity in stock : 20
2SA1127

2SA1127

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SA1127
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/55V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.4W
2SA1127
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/55V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.4W
Set of 1
0.35$ VAT incl.
(0.35$ excl. VAT)
0.35$
Out of stock
2SA1141

2SA1141

Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 200. Minimum hFE ga...
2SA1141
Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 200. Minimum hFE gain: 40. Collector current: 10A. Ic(pulse): 15A. Marking on the case: A1141. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: SOT-199. Housing (according to data sheet): SOT-199. Type of transistor: PNP. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 115V
2SA1141
Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 200. Minimum hFE gain: 40. Collector current: 10A. Ic(pulse): 15A. Marking on the case: A1141. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: SOT-199. Housing (according to data sheet): SOT-199. Type of transistor: PNP. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 115V
Set of 1
9.32$ VAT incl.
(9.32$ excl. VAT)
9.32$
Quantity in stock : 10
2SA1142

2SA1142

Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Collector current: 0.1A. Pd (Pow...
2SA1142
Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 8W. Type of transistor: PNP. Collector/emitter voltage Vceo: 180V
2SA1142
Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 8W. Type of transistor: PNP. Collector/emitter voltage Vceo: 180V
Set of 1
3.32$ VAT incl.
(3.32$ excl. VAT)
3.32$
Out of stock
2SA1144

2SA1144

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Collector current: 0.05A. Pd (Po...
2SA1144
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Collector current: 0.05A. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V
2SA1144
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Collector current: 0.05A. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V
Set of 1
2.20$ VAT incl.
(2.20$ excl. VAT)
2.20$
Quantity in stock : 75
2SA1145

2SA1145

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max h...
2SA1145
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 50mA. Note: 9mm. Marking on the case: A1145 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2705. BE diode: no. CE diode: no
2SA1145
Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 50mA. Note: 9mm. Marking on the case: A1145 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2705. BE diode: no. CE diode: no
Set of 1
1.42$ VAT incl.
(1.42$ excl. VAT)
1.42$
Quantity in stock : 24
2SA1146-PMC

2SA1146-PMC

Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: VCE(sat) 2V max. Max hF...
2SA1146-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: VCE(sat) 2V max. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Vcbo: 140V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 140V. Spec info: complementary transistor (pair) 2SC2706
2SA1146-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: VCE(sat) 2V max. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Vcbo: 140V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 140V. Spec info: complementary transistor (pair) 2SC2706
Set of 1
1.87$ VAT incl.
(1.87$ excl. VAT)
1.87$
Quantity in stock : 26
2SA1164

2SA1164

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SA1164
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V/30V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.2W
2SA1164
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 35V/30V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.2W
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 26
2SA1175

2SA1175

Resistor B: 47. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz....
2SA1175
Resistor B: 47. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no
2SA1175
Resistor B: 47. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no
Set of 1
0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 3
2SA1177

2SA1177

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D6/C. Configura...
2SA1177
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D6/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.15W
2SA1177
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D6/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.15W
Set of 1
0.39$ VAT incl.
(0.39$ excl. VAT)
0.39$
Quantity in stock : 27
2SA1179

2SA1179

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-236. Configu...
2SA1179
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-236. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 55V/50V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.2W
2SA1179
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-236. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 55V/50V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.2W
Set of 1
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 20
2SA1198

2SA1198

Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Colle...
2SA1198
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Collector current: 0.05A. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V
2SA1198
Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Collector current: 0.05A. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V
Set of 1
0.21$ VAT incl.
(0.21$ excl. VAT)
0.21$
Out of stock
2SA1200

2SA1200

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering (SMD). Housing: SOT-89. C...
2SA1200
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering (SMD). Housing: SOT-89. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.5W
2SA1200
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering (SMD). Housing: SOT-89. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.5W
Set of 1
0.83$ VAT incl.
(0.83$ excl. VAT)
0.83$
Quantity in stock : 5
2SA1208

2SA1208

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching...
2SA1208
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Collector current: 0.07A. Ic(pulse): 0.14A. Note: 9mm height. Pd (Power Dissipation, Max): 0.9W. Housing: TO-92. Housing (according to data sheet): SANYO--MP. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.14V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2910
2SA1208
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Collector current: 0.07A. Ic(pulse): 0.14A. Note: 9mm height. Pd (Power Dissipation, Max): 0.9W. Housing: TO-92. Housing (according to data sheet): SANYO--MP. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.14V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2910
Set of 1
1.26$ VAT incl.
(1.26$ excl. VAT)
1.26$
Quantity in stock : 20
2SA1209

2SA1209

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. ...
2SA1209
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Collector current: 140mA. Marking on the case: A1209. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2911. Housing: TO-126 (TO-225, SOT-32)
2SA1209
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Collector current: 140mA. Marking on the case: A1209. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2911. Housing: TO-126 (TO-225, SOT-32)
Set of 1
2.42$ VAT incl.
(2.42$ excl. VAT)
2.42$
Quantity in stock : 71
2SA1213Y

2SA1213Y

Cost): 40pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. ...
2SA1213Y
Cost): 40pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 2A. Marking on the case: NY. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Housing: SOT-89. Housing (according to data sheet): 2-5K1A. Type of transistor: PNP. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: screen printing / SMD code NY. BE diode: no. CE diode: no
2SA1213Y
Cost): 40pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 2A. Marking on the case: NY. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Housing: SOT-89. Housing (according to data sheet): 2-5K1A. Type of transistor: PNP. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: screen printing / SMD code NY. BE diode: no. CE diode: no
Set of 1
0.68$ VAT incl.
(0.68$ excl. VAT)
0.68$
Quantity in stock : 20
2SA1254

2SA1254

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D3/B. Configura...
2SA1254
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D3/B. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.4W
2SA1254
RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: D3/B. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.4W
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 21
2SA1265

2SA1265

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI, NF-E. Collector ...
2SA1265
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI, NF-E. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 140V. Spec info: complementary transistor (pair) 2SC3182. BE diode: no. CE diode: no
2SA1265
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI, NF-E. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 140V. Spec info: complementary transistor (pair) 2SC3182. BE diode: no. CE diode: no
Set of 1
2.52$ VAT incl.
(2.52$ excl. VAT)
2.52$
Quantity in stock : 35
2SA1294

2SA1294

Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Collector current: 15A. Number of...
2SA1294
Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Type of transistor: PNP. Collector/emitter voltage Vceo: 230V. Spec info: complementary transistor (pair) 2SC3263
2SA1294
Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Type of transistor: PNP. Collector/emitter voltage Vceo: 230V. Spec info: complementary transistor (pair) 2SC3263
Set of 1
3.22$ VAT incl.
(3.22$ excl. VAT)
3.22$
Quantity in stock : 30
2SA1294-SKN

2SA1294-SKN

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: HI-FI Aud...
2SA1294-SKN
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: HI-FI Audio. Max hFE gain: 140. Minimum hFE gain: 50. Collector current: 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Tf(max): 1.5us. Tf(min): 0.35us. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): MT-100. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3263. BE diode: no. CE diode: no
2SA1294-SKN
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: HI-FI Audio. Max hFE gain: 140. Minimum hFE gain: 50. Collector current: 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Tf(max): 1.5us. Tf(min): 0.35us. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): MT-100. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3263. BE diode: no. CE diode: no
Set of 1
8.11$ VAT incl.
(8.11$ excl. VAT)
8.11$
Quantity in stock : 3
2SA1295

2SA1295

Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Collector current: 17A. Pd (Power...
2SA1295
Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Collector current: 17A. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SC3264. Type of transistor: PNP. Collector/emitter voltage Vceo: 230V
2SA1295
Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Collector current: 17A. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SC3264. Type of transistor: PNP. Collector/emitter voltage Vceo: 230V
Set of 1
4.08$ VAT incl.
(4.08$ excl. VAT)
4.08$
Quantity in stock : 31
2SA1301

2SA1301

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
2SA1301
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector current: 12A. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SC3280
2SA1301
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector current: 12A. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SC3280
Set of 1
2.62$ VAT incl.
(2.62$ excl. VAT)
2.62$
Out of stock
2SA1302

2SA1302

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
2SA1302
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Collector/emitter voltage Vceo: 200V. Spec info: complementary transistor (pair) 2SC3281
2SA1302
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Collector/emitter voltage Vceo: 200V. Spec info: complementary transistor (pair) 2SC3281
Set of 1
2.92$ VAT incl.
(2.92$ excl. VAT)
2.92$
Quantity in stock : 19
2SA1303

2SA1303

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Collector current: 14A. Number of...
2SA1303
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Collector current: 14A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V. Spec info: complementary transistor (pair) 2SC3284. BE diode: no. CE diode: no
2SA1303
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Collector current: 14A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V. Spec info: complementary transistor (pair) 2SC3284. BE diode: no. CE diode: no
Set of 1
2.83$ VAT incl.
(2.83$ excl. VAT)
2.83$
Quantity in stock : 13
2SA1306

2SA1306

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package tran...
2SA1306
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package transistor. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SC3298. BE diode: no. CE diode: no
2SA1306
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package transistor. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SC3298. BE diode: no. CE diode: no
Set of 1
3.95$ VAT incl.
(3.95$ excl. VAT)
3.95$
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