Transistors

Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Function: Amplifier and switching applications. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+165°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Maximum saturation voltage VCE(sat): 3.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6491. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 90V. Spec info: complementary transistor (pair) 2N6491

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6488G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 15mA. Cutoff frequency ft [MHz]: 5 MHz. Maximum dissipation Ptot [W]: 0.075W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488

Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 90V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 40MHz (min), 200MHz (max). Max hFE gain: 200. Minimum hFE gain: 20. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: NPN Epitaxial Silicon Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 350V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 6V. Spec info: complementary transistor (pair) 2N6520. BE diode: no. CE diode: no

Housing: TO-92. Resistor B: Power Transistor. BE resistor: -350V. C(in): 100pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 200. Minimum hFE gain: 15. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 350V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6517. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-46. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6550. Drain-source voltage Uds [V]: 20V. Drain current Idss [A] @ Ug=0V: 10mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -3V @ +10V. Maximum dissipation Ptot [W]: 0.4W. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +125°C

C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. ID (T=25°C): 0.2A. Idss (max): 1000uA. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 5 Ohms. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Housing: TO-92. Housing (according to data sheet): O-92Ammo-Pack. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no

C(in): 60pF. Cost): 25pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 0.5A. ID (T=25°C): 0.2A. Idss (max): 1000uA. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 5 Ohms. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. C(in): 50pF. Cost): 25pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Small Signal MOSFET transistor. Id(imp): 0.8A. ID (T=100°C): 0.075A. ID (T=25°C): 0.115A. Idss (max): 500uA. IDss (min): 1uA. Marking on the case: 702. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. On-resistance Rds On: 7.5 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: V-MOS. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Spec info: 702. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: K72. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.210A. Drain current through resistor Rds [Ohm] @ Ids [A]: 13.5 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 2.8 ns. Switch-off delay tf[nsec.]: 7.6 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.37W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 22pF. Cost): 11pF. Channel type: N. Quantity per case: 2. Type of transistor: MOSFET. Id(imp): 0.8A. ID (T=100°C): 0.14A. ID (T=25°C): 0.23A. Idss (max): 500uA. IDss (min): 1uA. Marking on the case: K72. Number of terminals: 6. Pd (Power Dissipation, Max): 400mW. On-resistance Rds On: 3.2 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 7 ns. Technology: 'Enhancement Mode MOSFET'. Housing: SOT-363 ( SC-88 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Function: Motor Control, Power Management. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 72. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.115A. Drain current through resistor Rds [Ohm] @ Ids [A]: 13.5 Ohms @ 0.05A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 580pF. Cost): 86pF. Channel type: N. Function: Plasma display driver. Collector current: 30A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 87 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220D-A1. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 300V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5.5V. Spec info: High speed hall time--tf=200nS(typ). CE diode: no. Germanium diode: no

C(in): 1200pF. Cost): 125pF. Channel type: N. Function: VGE(th) VCE=10V, IC=1mA 3.0V...5.5V. Collector current: 40A. Ic(pulse): 230A. Ic(T=100°C): 40A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 75 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220D-A1. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.95V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 540V. Gate/emitter voltage VGE: 30 v. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5.5V. Spec info: High-speed switching--tf=185ns (typ). CE diode: no. Germanium diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: S-L, Low-sat. Collector current: 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Spec info: complementary transistor (pair) 2SC2562

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Collector current: 1A. Marking on the case: A1013-Y. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.6V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: audio amplifier. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 0.15A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92, 2-5F1B. Type of transistor: PNP. Operating temperature: -...+125°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Maximum saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC1162. BE diode: no. CE diode: no

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE.120-240. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.15A. Marking on the case: 1015 Y. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -...+125°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC1815Y. BE diode: no. CE diode: no

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: RM-60. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 12A. Maximum dissipation Ptot [W]: 120W

Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 10A. Pd (Power Dissipation, Max): 100W. Type of transistor: PNP. Collector/emitter voltage Vceo: 140V. Spec info: complementary transistor (pair) 2SC2581

RoHS: no. Component family: PNP bipolar transistor. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 200V. Collector current Ic [A], max.: 17A. Maximum dissipation Ptot [W]: 200W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 17A. Operating temperature range min (°C): PNP. Operating temperature range max (°C): 200V

RoHS: no. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SA1120. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: 170 MHz. Maximum dissipation Ptot [W]: 5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor