Transistors

C(in): 75pF. Cost): 15pF. Semiconductor material: silicon. Function: 1.6mm. Collector current: 0.1A. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=25°C): 0.47A. Idss (max): 0.47A. Pd (Power Dissipation, Max): 1W. On-resistance Rds On: 3 Ohms. Technology: V-MOS. Voltage Vds(max): 60V. Quantity per case: 1

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB10N07. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 900ns. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB14N04. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.07 Ohms @ 7A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 120ns. Switch-off delay tf[nsec.]: 500 ns. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB35N07-E. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 35A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 200 ns. Switch-off delay tf[nsec.]: 800 ns. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: VNB49N04. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 49A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 25A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 600 ns. Switch-off delay tf[nsec.]: 2400 ns. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

Channel type: N. Type of transistor: MOSFET. ID (T=25°C): 1.7A. Idss (max): 75uA. IDss (min): 30uA. Pd (Power Dissipation, Max): 7W. On-resistance Rds On: 0.25 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: OMNIFET II fully autoprotected Power MOSFET. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 45V. Quantity per case: 1. Note: screen printing/SMD code 1NV04P

Cost): 350pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 125 ns. Type of transistor: MOSFET. Function: Fully autoprotected power mosfet. G-S Protection: Zener diode. Id(imp): 14A. ID (T=25°C): 10A. Idss (max): 200uA. IDss (min): 50uA. IGF: 50mA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 230 ns. Td(on): 50 ns. Technology: OMNIFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 70V. Number of terminals: 3. Quantity per case: 1. Spec info: Linear Current Limitation

Channel type: N. Type of transistor: MOSFET. Function: Fully autoprotected power mosfet. ID (T=25°C): 20A. Idss (max): 200uA. IDss (min): 50uA. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 0.05 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: OMNIFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 70V. Maximum dissipation Ptot [W]: 83W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C. Spec info: Voltage Clamp 70V, I limit 20A

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): MOSFET. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: VNP35N07. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 35A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 200 ns. Switch-off delay tf[nsec.]: 1000 ns. Ciss Gate Capacitance [pF]: 100 ns. Maximum dissipation Ptot [W]: 125W. Used for: Ilim= 35A IR= -50A. Voltage Vds(max): 70V. Vin input voltage (max): 18V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: VNP5N07-E. Drain-source voltage Uds [V]: 70V. Drain Current Id [A] @ 25°C: 5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 250 ns. Maximum dissipation Ptot [W]: 31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +135°C

Channel type: N. Quantity per case: 1. Trr Diode (Min.): 107ns. Type of transistor: MOSFET. ID (T=25°C): 3.5A. Idss (max): 75uA. IDss (min): 30uA. Note: screen printing/SMD code S3NV04DP. Marking on the case: S3NV04DP. Pd (Power Dissipation, Max): 4W. On-resistance Rds On: 0.12 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 450 ns. Td(on): 90 ns. Technology: OMNIFET II fully autoprotected Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 45V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 38A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.099 Ohms @ 15A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 53 ns. Switch-off delay tf[nsec.]: 193 ns. Ciss Gate Capacitance [pF]: 2940pF. Maximum dissipation Ptot [W]: 277W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 130A. Power: 260W. On-resistance Rds On: 0.0055 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 100V

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 200A. Power: 260W. On-resistance Rds On: 0.0029 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 60V

Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 30A. Power: 125W. On-resistance Rds On: 0.056 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): -100V

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 70A. Power: 125W. On-resistance Rds On: 0.0086 Ohms. Housing: TO-220. Drain-source voltage (Vds): 100V

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.4 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Number of terminals: 3. Quantity per case: 1

Voltage: 60V. Max hFE gain: 100 (500mA, 2V). Collector current: 100nA (ICBO). Number of terminals: 8. Max: 140 MHz. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 2.75W. Housing: SO. Housing (according to data sheet): SM-8. Type of transistor: PNP & PNP. Operating temperature: -55°C ~ 150°C. Quantity per case: 2. Saturation voltage VCE(sat): 500mV (200mA, 2A)

Cost): 120pF. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 1200. Minimum hFE gain: 200. Collector current: 4A. Ic(pulse): 20A. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -50...+200°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.03V. Collector/emitter voltage Vceo: 25V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 2000. Function: unijunction transistor UJT, hi-beta, lo-sat. Spec info: complementary transistor (pair) ZTX788. BE diode: no. CE diode: no

Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX550. BE diode: no. CE diode: no

Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX551. BE diode: no. CE diode: no

Cost): 5pF. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 300mA. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: PLANAR MEDIUM POWER TRANSISTOR. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 400V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Number of terminals: 3. Spec info: complementary transistor (pair) ZTX451. BE diode: no. CE diode: no

Cost): 50pF. Semiconductor material: silicon. FT: 240 MHz. Max hFE gain: 300. Minimum hFE gain: 15. Collector current: 2A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 35V. Saturation voltage VCE(sat): 0.23V. Collector/emitter voltage Vceo: 25V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no