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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.6A, TO-92, TO-92, 160V - 2N5551

NPN transistor, 0.6A, TO-92, TO-92, 160V - 2N5551
[TITLE]
[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.11$ 1.11$
2 - 2 1.06$ 1.06$
3 - 4 1.00$ 1.00$
5 - 9 0.98$ 0.98$
10 - 24 0.75$ 0.75$
25 - 49 0.72$ 0.72$
50 - 732 0.53$ 0.53$
Quantity (Set of 10) U.P
1 - 1 1.11$ 1.11$
2 - 2 1.06$ 1.06$
3 - 4 1.00$ 1.00$
5 - 9 0.98$ 0.98$
10 - 24 0.75$ 0.75$
25 - 49 0.72$ 0.72$
50 - 732 0.53$ 0.53$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7318
Set of 10

NPN transistor, 0.6A, TO-92, TO-92, 160V - 2N5551. NPN transistor, 0.6A, TO-92, TO-92, 160V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 160V. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 6V. Original product from manufacturer Diotec Semiconductor. Quantity in stock updated on 24/05/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 2828
MMBT5551

MMBT5551

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: S...
MMBT5551
NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/SMD code G1 (3S Fairchild). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V
MMBT5551
NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/SMD code G1 (3S Fairchild). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V
Set of 10
0.88$ VAT incl.
(0.88$ excl. VAT)
0.88$

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