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Electronic components and equipment, for businesses and individuals

2N5551

2N5551
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.11$ 1.11$
2 - 2 1.06$ 1.06$
3 - 4 1.00$ 1.00$
5 - 9 0.95$ 0.95$
10 - 24 0.71$ 0.71$
25 - 49 0.66$ 0.66$
50 - 770 0.47$ 0.47$
Quantity (Set of 10) U.P
1 - 1 1.11$ 1.11$
2 - 2 1.06$ 1.06$
3 - 4 1.00$ 1.00$
5 - 9 0.95$ 0.95$
10 - 24 0.71$ 0.71$
25 - 49 0.66$ 0.66$
50 - 770 0.47$ 0.47$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7694
Set of 10

2N5551. RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.

Equivalent products :

Quantity in stock : 15414
MMBT5551

MMBT5551

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. ...
MMBT5551
Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Collector current: 0.6A. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: screen printing/SMD code G1 (3S Fairchild). BE diode: no. CE diode: no
MMBT5551
Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Collector current: 0.6A. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: screen printing/SMD code G1 (3S Fairchild). BE diode: no. CE diode: no
Set of 10
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$

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