Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.36$ | 0.36$ |
10 - 24 | 0.34$ | 0.34$ |
25 - 49 | 0.32$ | 0.32$ |
50 - 99 | 0.30$ | 0.30$ |
100 - 249 | 0.30$ | 0.30$ |
250 - 256 | 0.26$ | 0.26$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.36$ | 0.36$ |
10 - 24 | 0.34$ | 0.34$ |
25 - 49 | 0.32$ | 0.32$ |
50 - 99 | 0.30$ | 0.30$ |
100 - 249 | 0.30$ | 0.30$ |
250 - 256 | 0.26$ | 0.26$ |
2N5210. Cost): 4pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 600. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 50V. Vebo: 4.5V. Function: HI-FI low noise pre-amplifier. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.
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