2N5884

Quantity	excl. VAT	VAT incl.
1 - 1	6.24$	6.24$
2 - 2	5.93$	5.93$
3 - 4	5.62$	5.62$
5 - 9	5.31$	5.31$
10 - 19	5.18$	5.18$
20 - 29	5.06$	5.06$
30 - 161	4.87$	4.87$

Quantity	U.P
1 - 1	6.24$	6.24$
2 - 2	5.93$	5.93$
3 - 4	5.62$	5.62$
5 - 9	5.31$	5.31$
10 - 19	5.18$	5.18$
20 - 29	5.06$	5.06$
30 - 161	4.87$	4.87$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 161

Set of 1

2N5884. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 25A. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N5886. Quantity in stock updated on 23/12/2024, 19:25.

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Delivery in 2-3 days, with postal tracking!