Transistors

Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: S/VID. Max hFE gain: 160. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Temperature: +200°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar NPN transistor'. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Vcbo: 450V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 350V. Vebo: 7V

Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: S/VID. Production date: 2014/06. Max hFE gain: 160. Minimum hFE gain: 40. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 7V

Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Collector current: 10A. Number of terminals: 2. Pd (Power Dissipation, Max): 117W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V

Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Collector current: 10A. Number of terminals: 2. Pd (Power Dissipation, Max): 117W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 2A. Pd (Power Dissipation, Max): 35W. Type of transistor: NPN. Vcbo: 250V. Collector/emitter voltage Vceo: 175V

Quantity per case: 1. Semiconductor material: silicon. Function: NF-S. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Collector/emitter voltage Vceo: 25V

Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 30A. Ic(pulse): 30A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 40V. Vebo: 5V

RoHS: no. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3772. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 20A. Cutoff frequency ft [MHz]: 200kHz. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 60V. Collector/emitter voltage Vceo: 100V

Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Collector current: 16A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 140V. Collector/emitter voltage Vceo: 160V

Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 4 v. Collector/emitter voltage Vceo: 140V. Vebo: 7V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3773G. Collector-emitter voltage Uceo [V]: 140V. Collector current Ic [A], max.: 16A. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor

Channel type: N. Quantity per case: 1. Type of transistor: JFET. Function: VHF/RF amplifier. ID (T=25°C): 20mA. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Technology: Epitaxial. Housing: TO-92. Housing (according to data sheet): TO-92. Drain-source protection : no. G-S Protection: no

RoHS: no. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3820. Drain-source voltage Uds [V]: -20V. Drain current Idss [A] @ Ug=0V: -15mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: +8V @ -10V. Maximum dissipation Ptot [W]: 0.36W. Component family: P-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): JFET. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 8V

C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no

Housing: TO-92. Manufacturer's marking: 2N3904. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 40V. Collector current: 0.2A. Power: 0.625W. Max frequency: 300MHz. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: Si-Epitaxial PlanarTransistor. Housing (according to data sheet): TO-92Ammo-Pack. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3906. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150...500 MHz. Function: S. Max hFE gain: 300. Minimum hFE gain: 75. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 100 ns. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39 ( TO-5 ). Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. BE diode: no. CE diode: no

C(in): 30pF. Cost): 6.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 20. Collector current: 0.6A. Ic(pulse): 0.9A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing (according to data sheet): TO-92Ammo Pack. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no

C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no

Type of transistor: PNP transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -50V. Collector current: -50mA. Max frequency: 40 MHz. Housing: TO-92. Applications: Audio

Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 800. Minimum hFE gain: 250. Collector current: 50mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 50V. Vebo: 3V. Function: preamplifier. BE diode: no. CE diode: no

C(in): 10pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Max hFE gain: 900. Minimum hFE gain: 300. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 35V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 30 v. Function: HI-FI low noise pre-amplifier. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 1.2GHz. Max hFE gain: 210. Minimum hFE gain: 70. Collector current: 0.4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 20V. Vebo: 3V. BE diode: no. CE diode: no