2N5886

Quantity	excl. VAT	VAT incl.
1 - 1	8.62$	8.62$
2 - 2	8.19$	8.19$
3 - 4	7.76$	7.76$
5 - 9	7.33$	7.33$
10 - 19	7.15$	7.15$
20 - 29	6.98$	6.98$
30 - 168	6.72$	6.72$

Quantity	U.P
1 - 1	8.62$	8.62$
2 - 2	8.19$	8.19$
3 - 4	7.76$	7.76$
5 - 9	7.33$	7.33$
10 - 19	7.15$	7.15$
20 - 29	6.98$	6.98$
30 - 168	6.72$	6.72$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 168

Set of 1

2N5886. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 25A. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N5884. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 20:25.

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Delivery in 2-3 days, with postal tracking!