Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.35$ | 1.35$ |
5 - 9 | 1.28$ | 1.28$ |
10 - 14 | 1.21$ | 1.21$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.35$ | 1.35$ |
5 - 9 | 1.28$ | 1.28$ |
10 - 14 | 1.21$ | 1.21$ |
2N5416. C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed Switching and Linear amplifier. Max hFE gain: 120. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 20:25.
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