Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 19.14$ | 19.14$ |
2 - 2 | 18.19$ | 18.19$ |
3 - 4 | 17.23$ | 17.23$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 19.14$ | 19.14$ |
2 - 2 | 18.19$ | 18.19$ |
3 - 4 | 17.23$ | 17.23$ |
2N6468. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 15. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-66. Housing (according to data sheet): TO-66. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 130V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Quantity in stock updated on 23/12/2024, 20:25.
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