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Electronic components and equipment, for businesses and individuals

2N5459

2N5459
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[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.77$ 0.77$
5 - 9 0.73$ 0.73$
10 - 24 0.70$ 0.70$
25 - 49 0.66$ 0.66$
50 - 99 0.64$ 0.64$
100 - 249 0.58$ 0.58$
250 - 2070 0.55$ 0.55$
Quantity U.P
1 - 4 0.77$ 0.77$
5 - 9 0.73$ 0.73$
10 - 24 0.70$ 0.70$
25 - 49 0.66$ 0.66$
50 - 99 0.64$ 0.64$
100 - 249 0.58$ 0.58$
250 - 2070 0.55$ 0.55$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2070
Set of 1

2N5459. C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: FET. Function: Uni sym. Idss (max): 16mA. IDss (min): 4mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 4mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 4.5V. Gate/source voltage (off) max.: 8V. Gate/source voltage (off) min.: 2V. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 23/12/2024, 19:25.

Equivalent products :

Quantity in stock : 38
BF245B

BF245B

C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C):...
BF245B
C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 15mA. IDss (min): 6mA. IGF: 10mA. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
BF245B
C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 15mA. IDss (min): 6mA. IGF: 10mA. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
Set of 1
1.55$ VAT incl.
(1.55$ excl. VAT)
1.55$
Quantity in stock : 66
BF245C

BF245C

C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C):...
BF245C
C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 25mA. IDss (min): 12mA. IGF: 10mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 7.5V. Gate/source voltage (off) min.: 3.2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
BF245C
C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 25mA. IDss (min): 12mA. IGF: 10mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 7.5V. Gate/source voltage (off) min.: 3.2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
Set of 1
1.86$ VAT incl.
(1.86$ excl. VAT)
1.86$

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