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Electronic components and equipment, for businesses and individuals

2N5458

2N5458
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[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.16$ 2.16$
5 - 9 2.05$ 2.05$
10 - 24 1.94$ 1.94$
25 - 38 1.84$ 1.84$
Quantity U.P
1 - 4 2.16$ 2.16$
5 - 9 2.05$ 2.05$
10 - 24 1.94$ 1.94$
25 - 38 1.84$ 1.84$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 38
Set of 1

2N5458. C(in): 4.5pF. Channel type: N. Quantity per case: 1. Type of transistor: JFET. Function: Uni sym. Idss (max): 9mA. IDss (min): 2mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 23/12/2024, 20:25.

Equivalent products :

Quantity in stock : 38
BF245B

BF245B

C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C):...
BF245B
C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 15mA. IDss (min): 6mA. IGF: 10mA. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
BF245B
C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 15mA. IDss (min): 6mA. IGF: 10mA. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no
Set of 1
1.55$ VAT incl.
(1.55$ excl. VAT)
1.55$
Quantity in stock : 2719
MMBF5458

MMBF5458

C(in): 4.5pF. Channel type: N. Type of transistor: JFET. Function: Uni sym. Idss (max): 9mA. IDss (m...
MMBF5458
C(in): 4.5pF. Channel type: N. Type of transistor: JFET. Function: Uni sym. Idss (max): 9mA. IDss (min): 2mA. IGF: 10mA. Marking on the case: 61 S. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: general purpose JFET transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code 61S. Drain-source protection : no. G-S Protection: no
MMBF5458
C(in): 4.5pF. Channel type: N. Type of transistor: JFET. Function: Uni sym. Idss (max): 9mA. IDss (min): 2mA. IGF: 10mA. Marking on the case: 61 S. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: general purpose JFET transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code 61S. Drain-source protection : no. G-S Protection: no
Set of 1
0.24$ VAT incl.
(0.24$ excl. VAT)
0.24$
Quantity in stock : 2070
2N5459

2N5459

C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: F...
2N5459
C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: FET. Function: Uni sym. Idss (max): 16mA. IDss (min): 4mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 4mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 4.5V. Gate/source voltage (off) max.: 8V. Gate/source voltage (off) min.: 2V. Drain-source protection : no. G-S Protection: no
2N5459
C(in): 2250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 53 ns. Type of transistor: FET. Function: Uni sym. Idss (max): 16mA. IDss (min): 4mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 4mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: general purpose JFET transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 4.5V. Gate/source voltage (off) max.: 8V. Gate/source voltage (off) min.: 2V. Drain-source protection : no. G-S Protection: no
Set of 1
0.77$ VAT incl.
(0.77$ excl. VAT)
0.77$

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Quantity in stock : 38
2N5458

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2N3906

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2N6491

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Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gai...
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2N5484

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