2N6488

Quantity	excl. VAT	VAT incl.
1 - 4	1.75$	1.75$
5 - 9	1.66$	1.66$
10 - 24	1.57$	1.57$
25 - 49	1.49$	1.49$
50 - 76	1.45$	1.45$

Quantity	U.P
1 - 4	1.75$	1.75$
5 - 9	1.66$	1.66$
10 - 24	1.57$	1.57$
25 - 49	1.49$	1.49$
50 - 76	1.45$	1.45$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 76

Set of 1

2N6488. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Function: Amplifier and switching applications. Max hFE gain: 150. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+165°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Maximum saturation voltage VCE(sat): 3.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6491. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 1174

BD911

Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250....

Set of 1

0.91$ VAT incl.
(0.91$ excl. VAT)

0.91$

Out of stock

2N6488-HTC

Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Collector current: 15A. Pd (Power ...

Set of 1

1.43$ VAT incl.
(1.43$ excl. VAT)

1.43$