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2N4401

2N4401
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.07$ 1.07$
2 - 2 1.02$ 1.02$
3 - 4 0.96$ 0.96$
5 - 9 0.91$ 0.91$
10 - 24 0.86$ 0.86$
25 - 49 0.71$ 0.71$
50 - 63 0.66$ 0.66$
Quantity (Set of 10) U.P
1 - 1 1.07$ 1.07$
2 - 2 1.02$ 1.02$
3 - 4 0.96$ 0.96$
5 - 9 0.91$ 0.91$
10 - 24 0.86$ 0.86$
25 - 49 0.71$ 0.71$
50 - 63 0.66$ 0.66$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 630
Set of 10

2N4401. C(in): 30pF. Cost): 6.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 20. Collector current: 0.6A. Ic(pulse): 0.9A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.

Equivalent products :

Quantity in stock : 7694
2N5551

2N5551

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
2N5551
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. BE diode: no. CE diode: no
2N5551
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$

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2N5401

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MJE15030G

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MJE15031G

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Housing: TO-220. Resistor B: Power Transistor. BE resistor: -150V. C(in): -8A. Cost): 50W. Condition...
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2SB649A

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Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. ...
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2SC5200

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TIP42C

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Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain:...
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2SC1815

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Conditioning: roll. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain:...
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1N4004

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RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
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MJE350-ONS

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C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE...
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