Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.07$ | 1.07$ |
2 - 2 | 1.02$ | 1.02$ |
3 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.91$ | 0.91$ |
10 - 24 | 0.86$ | 0.86$ |
25 - 49 | 0.71$ | 0.71$ |
50 - 63 | 0.66$ | 0.66$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.07$ | 1.07$ |
2 - 2 | 1.02$ | 1.02$ |
3 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.91$ | 0.91$ |
10 - 24 | 0.86$ | 0.86$ |
25 - 49 | 0.71$ | 0.71$ |
50 - 63 | 0.66$ | 0.66$ |
2N4401. C(in): 30pF. Cost): 6.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 20. Collector current: 0.6A. Ic(pulse): 0.9A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.
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