2N5109

Quantity	excl. VAT	VAT incl.
1 - 1	7.25$	7.25$
2 - 2	6.89$	6.89$
3 - 4	6.52$	6.52$
5 - 9	6.16$	6.16$
10 - 19	6.02$	6.02$
20 - 23	5.87$	5.87$

Quantity	U.P
1 - 1	7.25$	7.25$
2 - 2	6.89$	6.89$
3 - 4	6.52$	6.52$
5 - 9	6.16$	6.16$
10 - 19	6.02$	6.02$
20 - 23	5.87$	5.87$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 23

Set of 1

2N5109. Quantity per case: 1. Semiconductor material: silicon. FT: 1.2GHz. Max hFE gain: 210. Minimum hFE gain: 70. Collector current: 0.4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 20V. Vebo: 3V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.

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Delivery in 2-3 days, with postal tracking!