Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.33$ | 1.33$ |
5 - 9 | 1.26$ | 1.26$ |
10 - 24 | 1.20$ | 1.20$ |
25 - 39 | 1.13$ | 1.13$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.33$ | 1.33$ |
5 - 9 | 1.26$ | 1.26$ |
10 - 24 | 1.20$ | 1.20$ |
25 - 39 | 1.13$ | 1.13$ |
2N3440. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: S/VID. Production date: 2014/06. Max hFE gain: 160. Minimum hFE gain: 40. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 7V. Quantity in stock updated on 23/12/2024, 18:25.
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