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Electronic components and equipment, for businesses and individuals

2N4403

2N4403
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[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.01$ 1.01$
2 - 2 0.96$ 0.96$
3 - 4 0.91$ 0.91$
5 - 9 0.86$ 0.86$
10 - 24 0.65$ 0.65$
25 - 49 0.61$ 0.61$
50 - 290 0.45$ 0.45$
Quantity (Set of 10) U.P
1 - 1 1.01$ 1.01$
2 - 2 0.96$ 0.96$
3 - 4 0.91$ 0.91$
5 - 9 0.86$ 0.86$
10 - 24 0.65$ 0.65$
25 - 49 0.61$ 0.61$
50 - 290 0.45$ 0.45$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2894
Set of 10

2N4403. RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing (according to data sheet): TO-92Ammo Pack. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 18:25.

Equivalent products :

Quantity in stock : 475
2N4403BU

2N4403BU

C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: si...
2N4403BU
C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no
2N4403BU
C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no
Set of 5
0.81$ VAT incl.
(0.81$ excl. VAT)
0.81$

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