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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.6A, TO-92, TO-92Ammo Pack, 40V - 2N4403

NPN-Transistor, 0.6A, TO-92, TO-92Ammo Pack, 40V - 2N4403
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.01$ 1.01$
2 - 2 0.96$ 0.96$
3 - 4 0.91$ 0.91$
5 - 9 0.89$ 0.89$
10 - 24 0.69$ 0.69$
25 - 49 0.65$ 0.65$
50 - 264 0.49$ 0.49$
Quantity (Set of 10) U.P
1 - 1 1.01$ 1.01$
2 - 2 0.96$ 0.96$
3 - 4 0.91$ 0.91$
5 - 9 0.89$ 0.89$
10 - 24 0.69$ 0.69$
25 - 49 0.65$ 0.65$
50 - 264 0.49$ 0.49$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2640
Set of 10

NPN-Transistor, 0.6A, TO-92, TO-92Ammo Pack, 40V - 2N4403. NPN-Transistor, 0.6A, TO-92, TO-92Ammo Pack, 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92Ammo Pack. Collector/emitter voltage Vceo: 40V. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Vebo: 5V. Original product from manufacturer Diotec. Quantity in stock updated on 21/05/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 454
2N4403BU

2N4403BU

NPN-Transistor, 0.6A, TO-92, TO-92, 40V. Collector current: 0.6A. Housing: TO-92. Housing (according...
2N4403BU
NPN-Transistor, 0.6A, TO-92, TO-92, 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. C(in): 30pF. Cost): 8.5pF. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
2N4403BU
NPN-Transistor, 0.6A, TO-92, TO-92, 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. C(in): 30pF. Cost): 8.5pF. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 5
0.81$ VAT incl.
(0.81$ excl. VAT)
0.81$

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