Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.27$ | 0.27$ |
10 - 24 | 0.26$ | 0.26$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.23$ | 0.23$ |
100 - 249 | 0.22$ | 0.22$ |
250 - 499 | 0.18$ | 0.18$ |
500 - 6721 | 0.17$ | 0.17$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.27$ | 0.27$ |
10 - 24 | 0.26$ | 0.26$ |
25 - 49 | 0.24$ | 0.24$ |
50 - 99 | 0.23$ | 0.23$ |
100 - 249 | 0.22$ | 0.22$ |
250 - 499 | 0.18$ | 0.18$ |
500 - 6721 | 0.17$ | 0.17$ |
2N5088. C(in): 10pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Max hFE gain: 900. Minimum hFE gain: 300. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 35V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 30 v. Function: HI-FI low noise pre-amplifier. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.
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