Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 11.50$ | 11.50$ |
2 - 2 | 10.92$ | 10.92$ |
3 - 4 | 10.35$ | 10.35$ |
5 - 7 | 9.77$ | 9.77$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 11.50$ | 11.50$ |
2 - 2 | 10.92$ | 10.92$ |
3 - 4 | 10.35$ | 10.35$ |
5 - 7 | 9.77$ | 9.77$ |
2N3773-ONS. Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 4 v. Collector/emitter voltage Vceo: 140V. Vebo: 7V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 18:25.
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