Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.57$ | 0.57$ |
5 - 9 | 0.54$ | 0.54$ |
10 - 24 | 0.51$ | 0.51$ |
25 - 49 | 0.46$ | 0.46$ |
50 - 99 | 0.44$ | 0.44$ |
100 - 149 | 0.37$ | 0.37$ |
150 - 743 | 0.35$ | 0.35$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.57$ | 0.57$ |
5 - 9 | 0.54$ | 0.54$ |
10 - 24 | 0.51$ | 0.51$ |
25 - 49 | 0.46$ | 0.46$ |
50 - 99 | 0.44$ | 0.44$ |
100 - 149 | 0.37$ | 0.37$ |
150 - 743 | 0.35$ | 0.35$ |
NPN transistor, 100mA, TO-92, TO-92, 40V - 2N3904. NPN transistor, 100mA, TO-92, TO-92, 40V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 8pF. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. Quantity in stock updated on 20/05/2025, 09:25.
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