Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.57$ | 0.57$ |
5 - 9 | 0.54$ | 0.54$ |
10 - 24 | 0.51$ | 0.51$ |
25 - 49 | 0.44$ | 0.44$ |
50 - 99 | 0.41$ | 0.41$ |
100 - 149 | 0.35$ | 0.35$ |
150 - 796 | 0.32$ | 0.32$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.57$ | 0.57$ |
5 - 9 | 0.54$ | 0.54$ |
10 - 24 | 0.51$ | 0.51$ |
25 - 49 | 0.44$ | 0.44$ |
50 - 99 | 0.41$ | 0.41$ |
100 - 149 | 0.35$ | 0.35$ |
150 - 796 | 0.32$ | 0.32$ |
2N3904. C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.
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