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2N4403BU

2N4403BU
Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.81$ 0.81$
3 - 4 0.77$ 0.77$
5 - 9 0.73$ 0.73$
10 - 19 0.69$ 0.69$
20 - 49 0.65$ 0.65$
50 - 95 0.55$ 0.55$
Quantity (Set of 5) U.P
1 - 2 0.81$ 0.81$
3 - 4 0.77$ 0.77$
5 - 9 0.73$ 0.73$
10 - 19 0.69$ 0.69$
20 - 49 0.65$ 0.65$
50 - 95 0.55$ 0.55$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 475
Set of 5

2N4403BU. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 18:25.

Equivalent products :

Quantity in stock : 2894
2N4403

2N4403

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. C...
2N4403
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing (according to data sheet): TO-92Ammo Pack. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no
2N4403
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing (according to data sheet): TO-92Ammo Pack. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no
Set of 10
1.01$ VAT incl.
(1.01$ excl. VAT)
1.01$

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