Quantity (Set of 5) | excl. VAT | VAT incl. |
---|---|---|
1 - 2 | 0.81$ | 0.81$ |
3 - 4 | 0.77$ | 0.77$ |
5 - 9 | 0.73$ | 0.73$ |
10 - 19 | 0.69$ | 0.69$ |
20 - 49 | 0.65$ | 0.65$ |
50 - 95 | 0.55$ | 0.55$ |
Quantity (Set of 5) | U.P | |
---|---|---|
1 - 2 | 0.81$ | 0.81$ |
3 - 4 | 0.77$ | 0.77$ |
5 - 9 | 0.73$ | 0.73$ |
10 - 19 | 0.69$ | 0.69$ |
20 - 49 | 0.65$ | 0.65$ |
50 - 95 | 0.55$ | 0.55$ |
2N4403BU. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 18:25.
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