2N3439

Quantity	excl. VAT	VAT incl.
1 - 2	4.77$	4.77$

Quantity	U.P
1 - 2	4.77$	4.77$

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Quantity in stock : 2

Set of 1

2N3439. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: S/VID. Max hFE gain: 160. Minimum hFE gain: 30. Collector current: 1A. Number of terminals: 3. Temperature: +200°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar NPN transistor'. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Vcbo: 450V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 350V. Vebo: 7V. Quantity in stock updated on 23/12/2024, 19:25.

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Delivery in 2-3 days, with postal tracking!