Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.82$ | 0.82$ |
2 - 2 | 0.78$ | 0.78$ |
3 - 4 | 0.74$ | 0.74$ |
5 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.60$ | 0.60$ |
25 - 49 | 0.56$ | 0.56$ |
50 - 437 | 0.52$ | 0.52$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.82$ | 0.82$ |
2 - 2 | 0.78$ | 0.78$ |
3 - 4 | 0.74$ | 0.74$ |
5 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.60$ | 0.60$ |
25 - 49 | 0.56$ | 0.56$ |
50 - 437 | 0.52$ | 0.52$ |
2N3906. RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: Si-Epitaxial PlanarTransistor. Housing (according to data sheet): TO-92Ammo-Pack. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 18:25.
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