Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 6.40$ | 6.40$ |
2 - 2 | 6.08$ | 6.08$ |
3 - 4 | 5.76$ | 5.76$ |
5 - 9 | 5.44$ | 5.44$ |
10 - 19 | 5.31$ | 5.31$ |
20 - 29 | 5.19$ | 5.19$ |
30+ | 4.99$ | 4.99$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 6.40$ | 6.40$ |
2 - 2 | 6.08$ | 6.08$ |
3 - 4 | 5.76$ | 5.76$ |
5 - 9 | 5.44$ | 5.44$ |
10 - 19 | 5.31$ | 5.31$ |
20 - 29 | 5.19$ | 5.19$ |
30+ | 4.99$ | 4.99$ |
2N3771. Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 30A. Ic(pulse): 30A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Quantity in stock updated on 23/12/2024, 18:25.
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