Transistors

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F5305S. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -31A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ -16A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 110W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF530NPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 9.2 ns. Switch-off delay tf[nsec.]: 35 ns. Ciss Gate Capacitance [pF]: 920pF. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 14A. Power: 75W. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Drain-source voltage (Vds): 100V

C(in): 1700pF. Cost): 560pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: 1.3k Ohms. Id(imp): 110A. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.077 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 33A. Power: 130W. On-resistance Rds On: 0.044 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): 100V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF540N. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 33A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1960pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1400pF. Cost): 330pF. Channel type: N. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Id(imp): 110A. ID (T=100°C): 25A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRF540NSPBF. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.052 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F540NS. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 33A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1960pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F540NS. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 33A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1960pF. Maximum dissipation Ptot [W]: 130W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF540PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 28A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohms @ 17A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 53 ns. Ciss Gate Capacitance [pF]: 1700pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1770pF. Cost): 180pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 140A. ID (T=100°C): 25A. ID (T=25°C): 36A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 92W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 21 milliOhms. Function: Ultra Low On-Resistance, <0.021 Ohms. Drain-source protection : yes. G-S Protection: no

C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: VGS @10V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 3.3A. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 1.16 Ohms. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Quantity per case: 1

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF610PBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 3.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 11 ns. Ciss Gate Capacitance [pF]: 140pF. Maximum dissipation Ptot [W]: 36W. Housing (JEDEC standard): 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 260pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 18A. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF620PBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 5.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.8 Ohms @ 3.1A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.2 ns. Switch-off delay tf[nsec.]: 19 ns. Ciss Gate Capacitance [pF]: 260pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 860pF. Cost): 220pF. Channel type: P. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 53 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): 50. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 75W. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.35 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 36A. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. Pd (Power Dissipation, Max): 72W. On-resistance Rds On: 0.34 Ohms. Assembly/installation: PCB through-hole mounting. Technology: N-Channel MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Quantity per case: 1

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630N. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 5.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7.9 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 575pF. Maximum dissipation Ptot [W]: 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630PBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 5.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 9.4 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 800pF. Maximum dissipation Ptot [W]: 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 8.1A. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.348 Ohms. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 250V. Quantity per case: 1