Transistors

C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF640NPBF. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 150W. Housing (JEDEC standard): 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F640NS. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 18A. Power: 125W. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Drain-source voltage (Vds): 200V

C(in): 1300pF. Cost): 330pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 8.5A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: td(on) 9.2ns, td(off) 18ns. Id(imp): 45A. ID (T=100°C): 4.5A. ID (T=25°C): 5.7A. Idss (max): 5.7A. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.028 Ohms. Technology: DirectFET POWER MOSFET. Voltage Vds(max): 100V. Quantity per case: 1. Note: isometric

C(in): 170pF. Cost): 34pF. Channel type: N. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 6A. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. On-resistance Rds On: 3.6 Ohms. RoHS: yes. Td(off): 12 ns. Td(on): 8 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Function: 2xN-CH 20V, Fast Switching. Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7101. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 3.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.8A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 320pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Function: 2xN-CH 50V. ID (T=25°C): 3A. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 50V. Quantity per case: 2. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7103. Drain-source voltage Uds [V]: 50V. Drain Current Id [A] @ 25°C: 3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.13 Ohms @ 3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 290pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: SO8. Power: 2W. Assembly/installation: SMD. Polarity: unipolar. Technology: HEXFET®. Drain-source voltage: 50V. Drain current: 3A. On-state resistance: 130m Ohms. Gate-source voltage: 20V, ±20V. Charge: 12nC. Thermal resistance: 62.5K/W

Function: 2xP-CH 20V. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Manufacturer's marking: F7104. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ -1A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 90 ns. Ciss Gate Capacitance [pF]: 290pF. Maximum dissipation Ptot [W]: 2W. Quantity per case: 2. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Housing: TO-220AB. Number of terminals: 3. Manufacturer's marking: IRF710PBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.6 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 170pF. Maximum dissipation Ptot [W]: 36W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 2A. On-resistance Rds On: 3.6 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Drain-source voltage (Vds): 400V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7201. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 7.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.03 Ohms @ 7.3A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 550pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7204. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -5.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.006 Ohms @ -5.3A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 150 ns. Ciss Gate Capacitance [pF]: 860pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 870pF. Cost): 720pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 15A. ID (T=100°C): 3.7A. ID (T=25°C): 4.6A. Idss (max): 5uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF720PBF. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 3.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 410pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7233. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -9.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 77 ns. Ciss Gate Capacitance [pF]: 6000pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7233. Drain-source voltage Uds [V]: -12V. Drain Current Id [A] @ 25°C: -9.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -9.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 77 ns. Ciss Gate Capacitance [pF]: 6000pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7301. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 4.1A/4.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.05 Ohms @ 2.6A/2.6A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 9 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 660pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. Function: 0.05R. Id(imp): 20A. ID (T=100°C): 3.9A. ID (T=25°C): 4.9A. Idss (max): 25uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&N-HEXFET Power MOSFETFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Quantity per case: 2

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F7303. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 4.9A/4.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms/0.05 Ohms @ 2.4A/2.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.8 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 520pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C