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Semiconductors Transistors

IRF634B

IRF634B
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.23$ 1.23$
5 - 9 1.16$ 1.16$
10 - 21 1.10$ 1.10$
Quantity U.P
1 - 4 1.23$ 1.23$
5 - 9 1.16$ 1.16$
10 - 21 1.10$ 1.10$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 21
Set of 1

IRF634B. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 8.1A. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.348 Ohms. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 250V. Quantity per case: 1. Quantity in stock updated on 12/01/2025, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 184
IRF740

IRF740

C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. ...
IRF740
C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
IRF740
C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.55 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
Set of 1
1.74$ VAT incl.
(1.74$ excl. VAT)
1.74$
Quantity in stock : 28
IRF634

IRF634

C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
IRF634
C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF634
C(in): 770pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 220 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8.1A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 4.2 ns. Td(on): 9.6 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.09$ VAT incl.
(1.09$ excl. VAT)
1.09$

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Quantity in stock : 106
IRFP460

IRFP460

C(in): 4200pF. Cost): 870pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type o...
IRFP460
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IRF9530N

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C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.)...
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IRFZ44N

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C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
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MCR100-8

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IRFS634A

IRFS634A

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id...
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Quantity in stock : 134
STP9NK50ZFP

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C(in): 910pF. Cost): 125pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
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Quantity in stock : 25
KSD73-Y

KSD73-Y

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: ...
KSD73-Y
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Quantity in stock : 121
MUR1100E

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Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Funct...
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Quantity in stock : 146
RFD8P05SM

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IRFZ48N

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C(in): 1970pF. Cost): 470pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
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