IRF540N

Quantity	excl. VAT	VAT incl.
1 - 4	1.49$	1.49$
5 - 9	1.42$	1.42$
10 - 24	1.34$	1.34$
25 - 49	1.27$	1.27$
50 - 99	1.24$	1.24$
100 - 249	1.14$	1.14$
250 - 503	1.08$	1.08$

Quantity	U.P
1 - 4	1.49$	1.49$
5 - 9	1.42$	1.42$
10 - 24	1.34$	1.34$
25 - 49	1.27$	1.27$
50 - 99	1.24$	1.24$
100 - 249	1.14$	1.14$
250 - 503	1.08$	1.08$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 503

Set of 1

IRF540N. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 13:25.

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Delivery in 2-3 days, with postal tracking!