Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.07$ | 1.07$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 49 | 0.95$ | 0.95$ |
50 - 99 | 0.93$ | 0.93$ |
100 - 249 | 0.91$ | 0.91$ |
250 - 536 | 0.80$ | 0.80$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.07$ | 1.07$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 49 | 0.95$ | 0.95$ |
50 - 99 | 0.93$ | 0.93$ |
100 - 249 | 0.91$ | 0.91$ |
250 - 536 | 0.80$ | 0.80$ |
IRF630. RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): 50. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 75W. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.35 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 25/12/2024, 02:25.
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