IRF540NS

Quantity	excl. VAT	VAT incl.
1 - 4	1.53$	1.53$
5 - 9	1.45$	1.45$
10 - 24	1.37$	1.37$
25 - 49	1.30$	1.30$
50 - 75	1.27$	1.27$

Quantity	U.P
1 - 4	1.53$	1.53$
5 - 9	1.45$	1.45$
10 - 24	1.37$	1.37$
25 - 49	1.30$	1.30$
50 - 75	1.27$	1.27$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 75

Set of 1

IRF540NS. C(in): 1400pF. Cost): 330pF. Channel type: N. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Id(imp): 110A. ID (T=100°C): 25A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRF540NSPBF. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.052 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 13:25.

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Delivery in 2-3 days, with postal tracking!