IRF6215SPBF

IRF6215SPBF. C(in): 860pF. Cost): 220pF. Channel type: P. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 53 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 02:25.