Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.06$ | 1.06$ |
5 - 9 | 1.01$ | 1.01$ |
10 - 24 | 0.96$ | 0.96$ |
25 - 49 | 0.90$ | 0.90$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.06$ | 1.06$ |
5 - 9 | 1.01$ | 1.01$ |
10 - 24 | 0.96$ | 0.96$ |
25 - 49 | 0.90$ | 0.90$ |
IRF620. C(in): 260pF. Cost): 100pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 18A. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.
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