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Electronic components and equipment, for businesses and individuals

IRF530N

IRF530N
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.73$ 1.73$
5 - 9 1.65$ 1.65$
10 - 24 1.56$ 1.56$
25 - 49 1.47$ 1.47$
50 - 99 1.44$ 1.44$
100 - 120 1.32$ 1.32$
Quantity U.P
1 - 4 1.73$ 1.73$
5 - 9 1.65$ 1.65$
10 - 24 1.56$ 1.56$
25 - 49 1.47$ 1.47$
50 - 99 1.44$ 1.44$
100 - 120 1.32$ 1.32$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 120
Set of 1

IRF530N. C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

Equivalent products :

Quantity in stock : 190
IRF530

IRF530

C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quan...
IRF530
C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
IRF530
C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no
Set of 1
1.02$ VAT incl.
(1.02$ excl. VAT)
1.02$

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IRF530N

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C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drai...
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IRF520

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IRF540

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IRF9540N

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MX-25201

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IRFZ44N

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IRF3205

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