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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V - IRF530N

N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V - IRF530N
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.73$ 1.73$
5 - 9 1.65$ 1.65$
10 - 24 1.59$ 1.59$
25 - 49 1.56$ 1.56$
50 - 99 1.53$ 1.53$
100 - 107 1.38$ 1.38$
Quantity U.P
1 - 4 1.73$ 1.73$
5 - 9 1.65$ 1.65$
10 - 24 1.59$ 1.59$
25 - 49 1.56$ 1.56$
50 - 99 1.53$ 1.53$
100 - 107 1.38$ 1.38$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 107
Set of 1

N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V - IRF530N. N-channel transistor, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 60A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 22/05/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 138
IRF530

IRF530

N-channel transistor, 10A, 14A, 250uA, 0.16 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=...
IRF530
N-channel transistor, 10A, 14A, 250uA, 0.16 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
IRF530
N-channel transistor, 10A, 14A, 250uA, 0.16 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 56A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. RoHS: yes. Spec info: Dynamic dv/dt Rating. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V
Set of 1
1.02$ VAT incl.
(1.02$ excl. VAT)
1.02$

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IRF520

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IRF510

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IRF9540N

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P-channel transistor, 23A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 23A. Idss (max): 250uA. Hous...
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IRFZ44N

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