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Semiconductors Transistors

IRF630B

IRF630B
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.45$ 1.45$
5 - 6 1.38$ 1.38$
Quantity U.P
1 - 4 1.45$ 1.45$
5 - 6 1.38$ 1.38$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 6
Set of 1

IRF630B. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 36A. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. Pd (Power Dissipation, Max): 72W. On-resistance Rds On: 0.34 Ohms. Assembly/installation: PCB through-hole mounting. Technology: N-Channel MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Quantity per case: 1. Quantity in stock updated on 25/12/2024, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 536
IRF630

IRF630

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDE...
IRF630
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): 50. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 75W. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.35 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
IRF630
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): 50. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF630. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 75W. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.35 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.12$ VAT incl.
(1.12$ excl. VAT)
1.12$

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