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Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...575859 6061...128
Quantity in stock : 56
BUL216

BUL216

Semiconductor material: silicon. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 4A. Ic(p...
BUL216
Semiconductor material: silicon. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 4A. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 9V. Function: high voltage fast switching, for switching power supplies. Quantity per case: 1. BE diode: no. CE diode: no
BUL216
Semiconductor material: silicon. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 4A. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 9V. Function: high voltage fast switching, for switching power supplies. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.07$ VAT incl.
(2.07$ excl. VAT)
2.07$
Quantity in stock : 102
BUL310

BUL310

Semiconductor material: silicon. FT: kHz. Max hFE gain: 14. Minimum hFE gain: 6. Collector current: ...
BUL310
Semiconductor material: silicon. FT: kHz. Max hFE gain: 14. Minimum hFE gain: 6. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Tf(max): 150us. Tf(min): 80us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching for switching power supplies
BUL310
Semiconductor material: silicon. FT: kHz. Max hFE gain: 14. Minimum hFE gain: 6. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Tf(max): 150us. Tf(min): 80us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching for switching power supplies
Set of 1
2.55$ VAT incl.
(2.55$ excl. VAT)
2.55$
Quantity in stock : 15
BUL312FP

BUL312FP

Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 13.5....
BUL312FP
Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 13.5. Minimum hFE gain: 8. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Tf(max): 150 ns. Tf(min): 80 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BUL312FP
Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 13.5. Minimum hFE gain: 8. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Tf(max): 150 ns. Tf(min): 80 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.15$ VAT incl.
(2.15$ excl. VAT)
2.15$
Quantity in stock : 84
BUL38D

BUL38D

Semiconductor material: silicon. Function: SMPS S-L. Collector current: 5A. Ic(pulse): 10A. Temperat...
BUL38D
Semiconductor material: silicon. Function: SMPS S-L. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 0.8us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Quantity per case: 1. Spec info: High-speed switching
BUL38D
Semiconductor material: silicon. Function: SMPS S-L. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 0.8us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Quantity per case: 1. Spec info: High-speed switching
Set of 1
1.07$ VAT incl.
(1.07$ excl. VAT)
1.07$
Quantity in stock : 61
BUL39D

BUL39D

Darlington transistor?: no. Semiconductor material: silicon. Function: Fast commutation for switchin...
BUL39D
Darlington transistor?: no. Semiconductor material: silicon. Function: Fast commutation for switching mode power supply. Max hFE gain: 10. Minimum hFE gain: 4. Collector current: 4A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 50 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 850V. Saturation voltage VCE(sat): 0.13V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Spec info: IFMS 8A, tp <5 ms
BUL39D
Darlington transistor?: no. Semiconductor material: silicon. Function: Fast commutation for switching mode power supply. Max hFE gain: 10. Minimum hFE gain: 4. Collector current: 4A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 50 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 850V. Saturation voltage VCE(sat): 0.13V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Spec info: IFMS 8A, tp <5 ms
Set of 1
1.01$ VAT incl.
(1.01$ excl. VAT)
1.01$
Out of stock
BUL410

BUL410

Semiconductor material: silicon. Function: SMPS S-L. Collector current: 7A. Pd (Power Dissipation, M...
BUL410
Semiconductor material: silicon. Function: SMPS S-L. Collector current: 7A. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: High-speed switching
BUL410
Semiconductor material: silicon. Function: SMPS S-L. Collector current: 7A. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: High-speed switching
Set of 1
1.90$ VAT incl.
(1.90$ excl. VAT)
1.90$
Quantity in stock : 1
BUL45

BUL45

Cost): 50pF. Semiconductor material: silicon. FT: 12 MHz. Function: SMPS S-L. Max hFE gain: 34. Mini...
BUL45
Cost): 50pF. Semiconductor material: silicon. FT: 12 MHz. Function: SMPS S-L. Max hFE gain: 34. Minimum hFE gain: 14. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. Spec info: High-speed switching. BE diode: no. CE diode: no
BUL45
Cost): 50pF. Semiconductor material: silicon. FT: 12 MHz. Function: SMPS S-L. Max hFE gain: 34. Minimum hFE gain: 14. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. Spec info: High-speed switching. BE diode: no. CE diode: no
Set of 1
1.46$ VAT incl.
(1.46$ excl. VAT)
1.46$
Quantity in stock : 130
BUL45D2G

BUL45D2G

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration:...
BUL45D2G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUL45D2G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BUL45D2G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUL45D2G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 51
BUL45GD2G

BUL45GD2G

Cost): 50pF. Semiconductor material: silicon. FT: 13 MHz. Function: High-speed, high-gain, bipolar N...
BUL45GD2G
Cost): 50pF. Semiconductor material: silicon. FT: 13 MHz. Function: High-speed, high-gain, bipolar NPN power transistor. Max hFE gain: 34. Minimum hFE gain: 22. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.28V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 400V. Vebo: 12V. Quantity per case: 1. Spec info: Built-in Efficient Antisaturation Network. BE diode: no. CE diode: yes
BUL45GD2G
Cost): 50pF. Semiconductor material: silicon. FT: 13 MHz. Function: High-speed, high-gain, bipolar NPN power transistor. Max hFE gain: 34. Minimum hFE gain: 22. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.28V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 400V. Vebo: 12V. Quantity per case: 1. Spec info: Built-in Efficient Antisaturation Network. BE diode: no. CE diode: yes
Set of 1
2.41$ VAT incl.
(2.41$ excl. VAT)
2.41$
Quantity in stock : 3
BUL54A

BUL54A

Semiconductor material: silicon. Function: SMPS S-L. Collector current: 4A. Pd (Power Dissipation, M...
BUL54A
Semiconductor material: silicon. Function: SMPS S-L. Collector current: 4A. Pd (Power Dissipation, Max): 65W. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 500V. Quantity per case: 1. Spec info: High-Speed. BE diode: no. CE diode: no
BUL54A
Semiconductor material: silicon. Function: SMPS S-L. Collector current: 4A. Pd (Power Dissipation, Max): 65W. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 500V. Quantity per case: 1. Spec info: High-Speed. BE diode: no. CE diode: no
Set of 1
2.58$ VAT incl.
(2.58$ excl. VAT)
2.58$
Quantity in stock : 16
BUL6802

BUL6802

Semiconductor material: silicon. FT: kHz. Function: High Speed ​​Switching. Max hFE gain: 40. Mi...
BUL6802
Semiconductor material: silicon. FT: kHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 5. Collector current: 1.2A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Vcbo: 600V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1
BUL6802
Semiconductor material: silicon. FT: kHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 5. Collector current: 1.2A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Vcbo: 600V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1
Set of 1
0.71$ VAT incl.
(0.71$ excl. VAT)
0.71$
Quantity in stock : 40
BUP313

BUP313

RoHS: no. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-218. Configuration:...
BUP313
RoHS: no. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-218. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUP313. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 32A. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 530 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 200W. Maximum collector current (A): 64A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BUP313
RoHS: no. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-218. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUP313. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 32A. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 530 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 200W. Maximum collector current (A): 64A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
12.06$ VAT incl.
(12.06$ excl. VAT)
12.06$
Quantity in stock : 28
BUR50

BUR50

Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 200V. Colle...
BUR50
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 200V. Collector current: 70A. Power: 350W. Housing: TO-3
BUR50
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 200V. Collector current: 70A. Power: 350W. Housing: TO-3
Set of 1
17.88$ VAT incl.
(17.88$ excl. VAT)
17.88$
Quantity in stock : 226
BUT11A

BUT11A

Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 35. M...
BUT11A
Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 4us. Tf(min): 0.8us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BUT11A
Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 4us. Tf(min): 0.8us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
1.74$ VAT incl.
(1.74$ excl. VAT)
1.74$
Quantity in stock : 63
BUT11AF

BUT11AF

Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): ...
BUT11AF
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1
BUT11AF
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$
Quantity in stock : 2
BUT11AF-F

BUT11AF-F

Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): ...
BUT11AF-F
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1
BUT11AF-F
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1
Set of 1
2.78$ VAT incl.
(2.78$ excl. VAT)
2.78$
Quantity in stock : 45
BUT11APX

BUT11APX

Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(p...
BUT11APX
Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BUT11APX
Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.24$ VAT incl.
(2.24$ excl. VAT)
2.24$
Quantity in stock : 62
BUT11AX-PHI

BUT11AX-PHI

Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): ...
BUT11AX-PHI
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: Tf 170ns
BUT11AX-PHI
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: Tf 170ns
Set of 1
2.42$ VAT incl.
(2.42$ excl. VAT)
2.42$
Quantity in stock : 18
BUT12AF

BUT12AF

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 10A. Pd (Power...
BUT12AF
Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 10A. Pd (Power Dissipation, Max): 23W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no
BUT12AF
Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 10A. Pd (Power Dissipation, Max): 23W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no
Set of 1
4.07$ VAT incl.
(4.07$ excl. VAT)
4.07$
Quantity in stock : 6
BUT18A-PHI

BUT18A-PHI

Semiconductor material: silicon. FT: 10 MHz. Collector current: 6A. Pd (Power Dissipation, Max): 110...
BUT18A-PHI
Semiconductor material: silicon. FT: 10 MHz. Collector current: 6A. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1
BUT18A-PHI
Semiconductor material: silicon. FT: 10 MHz. Collector current: 6A. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1
Set of 1
1.75$ VAT incl.
(1.75$ excl. VAT)
1.75$
Quantity in stock : 31
BUT18AF

BUT18AF

Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 35. Minimum hFE gain: 10. Collector curre...
BUT18AF
Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 6A. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Function: high voltage, high speed
BUT18AF
Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 6A. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Function: high voltage, high speed
Set of 1
1.08$ VAT incl.
(1.08$ excl. VAT)
1.08$
Out of stock
BUT18AF-PHI

BUT18AF-PHI

Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 6A. Pd (Power Dissipa...
BUT18AF-PHI
Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 6A. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1
BUT18AF-PHI
Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 6A. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1
Set of 1
4.08$ VAT incl.
(4.08$ excl. VAT)
4.08$
Quantity in stock : 2
BUT56A

BUT56A

Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 8A. Pd (Power Dissipa...
BUT56A
Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 8A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1
BUT56A
Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 8A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1
Set of 1
2.35$ VAT incl.
(2.35$ excl. VAT)
2.35$
Quantity in stock : 1
BUT93D

BUT93D

Semiconductor material: silicon. FT: 9 MHz. Function: S-L, SN. Collector current: 4A. Pd (Power Diss...
BUT93D
Semiconductor material: silicon. FT: 9 MHz. Function: S-L, SN. Collector current: 4A. Pd (Power Dissipation, Max): 55W. Type of transistor: NPN. Vcbo: 600V. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. CE diode: yes
BUT93D
Semiconductor material: silicon. FT: 9 MHz. Function: S-L, SN. Collector current: 4A. Pd (Power Dissipation, Max): 55W. Type of transistor: NPN. Vcbo: 600V. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. CE diode: yes
Set of 1
1.01$ VAT incl.
(1.01$ excl. VAT)
1.01$
Quantity in stock : 9
BUV20

BUV20

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number o...
BUV20
RoHS: yes. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUV20. Collector-emitter voltage Uceo [V]: 125V. Collector current Ic [A], max.: 50A. Cutoff frequency ft [MHz]: 8 MHz. Maximum dissipation Ptot [W]: 250W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C
BUV20
RoHS: yes. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUV20. Collector-emitter voltage Uceo [V]: 125V. Collector current Ic [A], max.: 50A. Cutoff frequency ft [MHz]: 8 MHz. Maximum dissipation Ptot [W]: 250W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C
Set of 1
29.91$ VAT incl.
(29.91$ excl. VAT)
29.91$
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